onsemi SMMBT2907ALT3G
$ 0.036
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -23.91%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi SMMBT2907ALT3G.
Modelli CAD
Scarica il simbolo onsemi SMMBT2907ALT3G, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | 3D | Scarica |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.036
$ 0.037
$ 0.037
Stock
1,461,516
114,738,757
114,738,757
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-23-3
SOT-23
SOT-23
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-60 V
-60 V
-60 V
Max Collector Current
600 mA
600 mA
600 mA
Transition Frequency
200 MHz
200 MHz
200 MHz
Collector Emitter Saturation Voltage
-1.6 V
-400 mV
-400 mV
hFE Min
100
100
100
Power Dissipation
225 mW
225 mW
225 mW
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-04-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiMMBT2907ALT3G
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
onsemiMMBT2907ALT1
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
Diodes Inc.DDTB113ZC-7-F
DDTB Series PNP 40 V 500 mA Pre-Biased Surface Mount Transistor - SOT-23-3
Diodes Inc.DDTB114EC-7-F
DDTBxx Series 50 V 500 mA PNP Small Signal Surface Mount Transistor - SOT-23-3
Diodes Inc.DDTB142JC-7-F
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Descrizioni
Descrizioni di onsemi SMMBT2907ALT3G fornite dai suoi distributori.
ON SEMI SMMBT2907ALT3G PNP BIPOLAR TRANSISTOR, 0.6 A, 60 V, 3-PIN SOT-23
MMBT2907AL Series 60 V 600 mA 300 mW Surface Mount PNP Transistor - SOT-23-3
Small Signal Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
1.6V@ 50mA,500mA PNP 350mW 5V 10nA 60V 60V 600mA SOT-23-3,TO-236 2.9mm*1.3mm*940¦Ìm
Trans GP BJT PNP 60V 0.6A 350mW Automotive 3-Pin SOT-23 T/R
600 mA 60 V PNP Si SMALL SIGNAL TRANSISTOR TO-236AB
BIPOLAR TRANSISTOR, PNP, -60V, SOT-23-3;; BIPOLAR TRANSISTOR, PNP, -60V, SOT-23-3; Transistor Polarity: PNP; Collector Emitter Voltage Max: 60V; Continuous Collector Current: 600mA; Power Dissipation: 225mW; Transistor Mount
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -23.91%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23-3
Number of Pins3
Number of Terminals3
Technical
Collector Base Voltage (VCBO)-60 V
Collector Emitter Breakdown Voltage-60 V
Collector Emitter Saturation Voltage-1.6 V
Collector Emitter Voltage (VCEO)60 V
Continuous Collector Current-600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min100
Max Breakdown Voltage60 V
Max Collector Current600 mA
Max Frequency100 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation300 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation225 mW
Schedule B8541210080
Transition Frequency200 MHz
Dimensions
Height1.11 mm
Length3.04 mm
Width2.64 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi SMMBT2907ALT3G.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
RatingsAEC-Q101
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità