DIODE, RECTIFIER, 6A, 600V, TO-252; Diode Type:Ultrafast Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):6A; Forward Voltage VF Max:2.1V; Reverse Recovery Time trr Max:35ns; Forward Surge Current Ifsm Max:60A; Operating Temperature Range:-65°C to +175°C; Diode Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2011)

element14 APAC

The RHRD660S is a hyperfast diodes with soft recovery characteristics. It has the half recovery time of Ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.

Fairchild Semiconductor

Immagini

Farnell

Future Electronics

Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON Semiconductor / Fairchild
ON SEMICOND
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
onsemi / Fairchild
ON SEMICONDUCTOR CORP
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

RHRD 660S9A
RHRD660S9A.

Cronologia dell'inventario

Trend storico dell'inventario non disponibile

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

Case/PackageTO-252

MountSurface Mount

Number of Pins3

Number of Terminals2

Weight260.37 mg

Technical

Average Rectified Current6 A

Current Rating6 A

Element ConfigurationSingle

Forward Current6 A

Forward Voltage2.1 V

Max Forward Surge Current (Ifsm)60 A

Max Operating Temperature175 °C

Max Output Current6 A

Max Repetitive Reverse Voltage (Vrrm)600 V

Max Reverse Voltage (DC)600 V

Max Surge Current60 A

Min Operating Temperature-65 °C

Number of Elements1

Output Current6 A

Peak Non-Repetitive Surge Current60 A

Peak Reverse Current100 µA

PolarityStandard

Power Dissipation50 W

Recovery Time30 ns

Reverse Recovery Time35 ns

Reverse Standoff Voltage600 V

Reverse Voltage600 V

Schedule B8541100080

Voltage Rating (DC)600 V

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi RHRD660S9A.

onsemi

Datasheet5 pagine24 anni fa

Datasheet0 pagine0 anni fa

IHS

Future Electronics

Fairchild Semiconductor

Farnell

Conformità

Classificazione ambientale

China RoHSNon-Compliant

Lead FreeLead Free

REACH SVHCAffected

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement3 pagine13 anni fa

Materials Sheet3 pagine13 anni fa

Reach Statement3 pagine12 anni fa

Materials Sheet3 pagine12 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A