onsemi PZT2907AT1G
$ 0.131
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 45J2215 | 5303 | 1 | 9h | ||||||||
| Newark | PZT2907AT1G | 7485 | 1 | Cut Tape | ||||||||
| Verical | PZT2907AT1G | 301.170 | 91 | |||||||||
| Arrow Electronics | PZT2907AT1G | 301.170 | 1 | |||||||||
| Future Electronics | PZT2907AT1G | 61.000 | 1K | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -15.34%
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi PZT2907AT1G.
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Questo componente
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Price @ 1000
$ 0.131
$ 0.188
$ 0.188
Stock
4,761,628
689,371
689,371
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-223-4
SOT-223-4
SOT-223-4
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-
60 V
60 V
Max Collector Current
600 mA
600 mA
600 mA
Transition Frequency
200 MHz
200 MHz
200 MHz
Collector Emitter Saturation Voltage
1.6 V
1.6 V
1.6 V
hFE Min
50
50
50
Power Dissipation
1.5 W
1.5 W
1.5 W
Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1992-11-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi PZT2907AT1G fornite dai suoi distributori.
Bipolar (BJT) Single Transistor, General Purpose, PNP, 60 V, 600 mA, 1.5 W, SOT-223, Surface Mount
TRANSISTOR, BIPOLAR, SI, PNP, SWITCHING, VCEO -60VDC, IC -600MA, PD 1.5W, SOT-223
Trans GP BJT PNP 60V 0.6A 1500mW 4-Pin(3+Tab) SOT-223 T/R
60V 1.5W 100@150mA,10V 600mA PNP SOT-223-4 Bipolar Transistors - BJT ROHS
General Purpose Transistors PNP Ic=600mA Vceo=60V hfe=100~300 P=1.5W SOT223
Power Bipolar Transistor, 0.6A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-261AA, Plastic/Epoxy, 4 Pin
This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
Bipolar Transistor, Full Reel; Transistor Polarity:Pnp; Collector Emitter Voltage Max:60V; Continuous Collector Current:600Ma; Power Dissipation:500Mw; Transistor Mounting:Surface Mount; No. Of Pins:4Pins; Transition Frequency:200Mhzrohs Compliant: Yes |Onsemi PZT2907AT1G.
Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) mA = 600 / Collector-Emitter Voltage (Vceo) V = 60 / DC Current Gain (hFE) = 300 / Collector-Base Voltage (Vcbo) V = 60 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 200 / Power Dissipation (Pd) W = 1.5 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.6 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2.6 / Reflow Temperature Max. °C = 260
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -15.34%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-223-4
Contact PlatingTin
Number of Pins4
Number of Terminals4
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Saturation Voltage1.6 V
Collector Emitter Voltage (VCEO)60 V
Current Rating-600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Fall Time30 ns
Frequency200 MHz
Gain Bandwidth Product200 MHz
hFE Min50
Max Breakdown Voltage60 V
Max Collector Current600 mA
Max Frequency200 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation1.5 W
Rise Time40 ns
Schedule B8541290080
Transition Frequency200 MHz
Voltage Rating (DC)-60 V
Dimensions
Height1.651 mm
Length6.6802 mm
Width3.7084 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi PZT2907AT1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità