onsemi PZT2222AT1G
$ 0.177
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | 45J2214 | 6050 | 1 | 19h | ||||||||
| Newark | PZT2222AT1G | 6050 | 1 | Cut Tape | ||||||||
| Arrow Electronics | PZT2222AT1G | 1169 | 1 | |||||||||
| Verical | PZT2222AT1G | 79.000 | 1K | |||||||||
| Future Electronics | PZT2222AT1G | 76.000 | 1K | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -71.64%
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Price @ 1000
$ 0.177
$ 0.183
Stock
3,301,987
635,268
Authorized Distributors
6
6
Mount
-
-
Case/Package
SOT-223-4
SOT-223-4
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
Max Collector Current
600 mA
600 mA
Transition Frequency
300 MHz
300 MHz
Collector Emitter Saturation Voltage
1 V
1 V
hFE Min
40
40
Power Dissipation
1.5 W
1.5 W
Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-05-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiPZT3904T1G
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 200 mA, 1.5 W, SOT-223, Surface Mount
onsemiBCP56-16T3G
General Purpose Transistor Medium Power, NPN 80 V, 1 A BJT - NPN, 80V, 1A. ONSSPCTRNSTVU6M5P;
Descrizioni
Descrizioni di onsemi PZT2222AT1G fornite dai suoi distributori.
Transistor General Purpose BJT NPN 40 Volt 0.6A Automotive 4-Pin(3+Tab) SOT-223
TRANSISTOR, BIPOLAR, SI, NPN, SWITCHING, VCEO 40VDC, IC 600MA, PD 1.5W, SOT-223,HFE 40
Bipolar (BJT) Single Transistor, General Purpose, NPN, 40 V, 600 mA, 1.5 W, SOT-223, Surface Mount
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-261AA
PZT2222A Series 40 V 600 mA NPN Silicon Planar Epitaxial Transistor - SOT-223
Bipolar Transistors - BJT 600mA 75V NPN
General Purpose Transistors NPN Ic=600mA Vceo=40V hfe=100~300 P=1.5W SOT223
This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount applications.
TRANSISTOR, NPN, SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 1.5W; DC Collector Current: 600mA; DC Current Gain hFE: 300hFE; Transistor Cas
Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) mA = 600 / Collector-Emitter Voltage (Vceo) V = 40 / DC Current Gain (hFE) = 35 / Collector-Base Voltage (Vcbo) V = 75 / Emitter-Base Voltage (Vebo) V = 6 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Transit Frequency MHz = 300 / Power Dissipation (Pd) W = 1.5 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 2 / Reflow Temperature Max. °C = 260
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -71.64%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-223-4
Contact PlatingTin
Number of Pins4
Number of Terminals4
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)75 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)40 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min40
Max Breakdown Voltage40 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Operating Temperature150 °C
Max Power Dissipation1.5 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation1.5 W
Schedule B8541290080
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height1.57 mm
Length6.5 mm
Width3.5 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità