onsemi NTGD1100LT1G
$ 1.5
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | NTGD1100LT1G | 0 | 1 | Bulk | 12h | |||||||
| Newark | NTGD1100LT1G | 0 | 5 | Cut Tape | ||||||||
| Farnell | NTGD1100LT1G | 0 | 1 | Cut Tape | 23h | |||||||
| Win Source | WS-NTGD1100LT1G | 48.748 | 90 | 1d | ||||||||
| Worldway Electronics | NTGD1100LT1G | 27.357 | 7 | Tape & Reel | 23h |
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi NTGD1100LT1G.
Modelli CAD
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Supply Chain
Lifecycle StatusEOL (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
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Descrizioni
Descrizioni di onsemi NTGD1100LT1G fornite dai suoi distributori.
NTGD1100LT1G DUAL N/P-CHANNEL MOSFET TRANSISTOR, 3.3 A, 8 V, 6-PIN TSOP
Dual P-Channel Small Signal MOSFET with Level-Shift -8V, -3.3A, 55mΩ Small Signal MOSFET 8V 3.3 A 55 mOhm Dual P-Channel TSOP6 with Level-Shift
P-Channel 8 V 40 mOhm 0.83 W Surface Mount Power MOSFET - TSOP-6
Transistor Polarity:complementary N And P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:-; On Resistance Rds(On):0.04Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; No. Of Pins:6Pins Rohs Compliant: Yes
Small Signal Field-Effect Transistor, 3.3A I(D), 8V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSC
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)3.3 A
Current Rating3.3 A
Drain to Source Breakdown Voltage8 V
Drain to Source Resistance140 mΩ
Drain to Source Voltage (Vdss)8 V
Element ConfigurationDual
Gate to Source Voltage (Vgs)8 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation830 mW
Min Breakdown Voltage8 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Number of Outputs1
PackagingTape and Reel
Power Dissipation830 mW
Resistance40 MΩ
TypeGeneral Purpose
Voltage Rating (DC)20 V
Dimensions
Height1.1 mm
Length3.1 mm
Width1.7 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi NTGD1100LT1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità