onsemi NTD60N02R-1G
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi NTD60N02R-1G.
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Questo componente
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Price @ 1000
$ 0.132
Stock
628,269
720,565
Authorized Distributors
0
2
Mount
Through Hole
-
Case/Package
TO-251-3
DPAK
Drain to Source Voltage (Vdss)
25 V
-
Continuous Drain Current (ID)
32 A
32 A
Threshold Voltage
-
-
Rds On Max
10.5 mΩ
-
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.87 W
1.87 W
Input Capacitance
1.33 nF
-
Supply Chain
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusObsolete (Last Updated: 5 years ago)
LTB Date2010-10-14
LTD Date2011-04-14
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 years ago)
Parti correlate
onsemiNTD70N03R-001
Tube Through Hole N-Channel Single Mosfet Transistor 10A Ta 32A Tc 32A 1.87W 1.3ns
onsemiNTD65N03R-1G
Tube Through Hole N-Channel Single Mosfet Transistor 9.5A Ta 32A Tc 32A 50W 20.3ns
onsemiNTD4809NA-1G
Tube Through Hole N-Channel Single Mosfet Transistor 9.6A Ta 58A Tc 11.5A 2W 2.3ns
Descrizioni
Descrizioni di onsemi NTD60N02R-1G fornite dai suoi distributori.
Tube Through Hole N-Channel Single Mosfet Transistor 8.5A Ta 32A Tc 32A 1.87W 33ns
Power MOSFET 25V 62A 10.5 mOhm Single N-Channel DPAK
Trans MOSFET N-CH 25V 32A 3-Pin(3+Tab) IPAK Tube
MOSFETs- Power and Small Signal 25V 62A N-Channel
Power Field-Effect Transistor, 32A I(D), 25V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
1.25W(Ta),58W(Tc) 20V 2V@ 250¦ÌA 14nC@ 4.5 V 1N 25V 10.5m¦¸@ 20A,10V 62A 1.33nF@20V TO-252-3 6.73mm*2.38mm*6.35mm
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:62A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):10.5mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V; Power Dissipation, Pd:58W ;RoHS Compliant: Yes
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-251-3
Contact PlatingTin
MountThrough Hole
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)32 A
Current Rating62 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)25 V
Element ConfigurationSingle
Fall Time33 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.33 nF
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage25 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation1.87 W
Rds On Max10.5 mΩ
Rise Time33 ns
Turn-Off Delay Time19 ns
Voltage Rating (DC)25 V
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi NTD60N02R-1G.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità