onsemi NSS40301MZ4T1G

3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor. ONSSPCTRNSTLT1T0R;
$ 0.225
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Schede tecniche e documenti

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IHS

Datasheet8 pagine2 anni fa

Upverter

Master Electronics

Newark

Farnell

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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 0.225
$ 0.202
Stock
1,072,801
107,325
Authorized Distributors
6
6
Mount
-
-
Case/Package
SOT-223-4
SOT-223-4
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
Max Collector Current
3 A
3 A
Transition Frequency
215 MHz
215 MHz
Collector Emitter Saturation Voltage
200 mV
-
hFE Min
100
100
Power Dissipation
2 W
2 W

Supply Chain

Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-14
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

40V 2W 200@1A,1V 3A NPN SOT-223 Bipolar Transistors - BJT ROHS
3.0 A, 40 V NPN Bipolar Power Transistor
NJT4031N Series 40 V 3 A Surface Mount NPN Bipolar Power Transistor - SOT-223

Descrizioni

Descrizioni di onsemi NSS40301MZ4T1G fornite dai suoi distributori.

3.0 A, 40 V Low VCE(sat) NPN Power Bipolar Junction Transistor. ONSSPCTRNSTLT1T0R;
NSS Series 40 V 3 A Surface Mount Low Vce NPN Transistor - SOT-223
ON SEMI NSS40301MZ4T1G NPN BIPOLAR TRANSISTOR, 3 A, 40 V SOT-223
Trans GP BJT NPN 40V 3A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R
40V, 3.0A, LOW VCE(SAT) BIPOLAR NPN POWER TRANSISTOR Power Bipolar Transistor, 3A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-261, Plastic/Epoxy, 4 Pin
200mV@ 300mA,3A NPN 2W 6V 100nA 40V 40V 3A SOT-223 6.5mm*3.5mm*1.63mm
40V 2W 3A 200@1A1V 215MHz 200mV@3A300mA NPN -55¡Í~+150¡Í@(Tj) SOT-223 Bipolar Transistors - BJT ROHS
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, NPN, 40V, 3A, SOT-223; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Transition Frequency ft:215MHz; Power Dissipation
The combination of low saturation voltage and high gain makes this an ideal device for high speed switching applications where power savings is a concern.
Bipolar Transistor, Npn, 40V, Sot-223; Transistor, Polaridad:Npn; Tensión Colector Emisor V(Br)Ceo:40V; Frecuencia De Transición Ft:200Mhz; Disipación De Potencia Pd:2W; Corriente De Colector Dc:3A; Ganancia De Corriente Dc Hfe:200 |Onsemi NSS40301MZ4T1G

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