onsemi NGTB40N120IHRWG

Trans IGBT Chip N-CH 1200V 120A 384000mW 3-Pin(3+Tab) TO-247 Tube
$ 2.558
EOL
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IHS

Datasheet11 pagine12 anni fa

Farnell

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Country of OriginVietnam
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-08-13
Lifecycle StatusEOL (Last Updated: 2 days ago)
LTB Date2021-07-05
LTD Date2022-07-05
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)

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40 A, 1200 V short circuit rugged IGBT with Ultrafast diode

Descrizioni

Descrizioni di onsemi NGTB40N120IHRWG fornite dai suoi distributori.

Trans IGBT Chip N-CH 1200V 120A 384000mW 3-Pin(3+Tab) TO-247 Tube
IGBT, 1200V 40A FS2-RC Induction Heating
Insulated Gate Bipolar Transistor, 80A I(C), 1200V V(BR)CES, N-Channel
384W 2.3V 2.55V@ 15V,40A 80A TO-247 16.25mm*5.3mm*21.4mm
IGBT TRENCH FS 1200V 80A TO-247
TRANSISTOR, IGBT, 2.3V, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.3V; Power Dissipation Pd: 384W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. o
Igbt, Single, 1.2Kv, 80A, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:2.3V; Power Dissipation:384W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Onsemi NGTB40N120IHRWG

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  • onsemiconductor
  • On Semiconductor Ltd