onsemi NDT456P
$ 0.601
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Cronologia dell'inventario
Tendenza a 3 mesi: -28.40%
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1996-07-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
Diodes Inc.DMN3032LE-13
N-Channel 30 V 29 mOhm Surface Mount Enhancement Mode Mosfet - SOT-223
InfineonIRLL3303PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.031Ohm;ID 4.6A;SOT-223;PD 1W;VGS +/-16V
Descrizioni
Descrizioni di onsemi NDT456P fornite dai suoi distributori.
Transistor MOSFET P-Channel 30V 7.5A 3W (Ta) Surface Mount SOT-223-4
MOSFET P-CH 30V 7.5A SOT-223-4 / Trans MOSFET P-CH 30V 7.5A 4-Pin(3+Tab) SOT-223 T/R
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.
MOSFET, P, LOGIC, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:7.3A; Drain Source Voltage Vds:30V; On Resistance Rds(on):35mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:1.5V; Transistor Case Style:SOT-223; No. of Pins:4; SVHC:No SVHC (20-Jun-2011); Current Id Max:7.5A; Current Temperature:25°C; External Depth:7.3mm; External Length / Height:1.7mm; External Width:6.7mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-223; Power Dissipation Pd:3W; Power Dissipation Pd:3W; Pulse Current Idm:20A; SMD Marking:456; Tape Width:12mm; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:-1.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:-3V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -28.40%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight250.2 mg
Technical
Continuous Drain Current (ID)7.5 A
Current Rating-7.3 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance30 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.44 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3 W
Min Breakdown Voltage30 V
Min Operating Temperature-65 °C
Nominal Vgs1.5 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1.1 W
Rds On Max30 mΩ
Resistance30 mΩ
Rise Time65 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1.5 V
Turn-Off Delay Time70 ns
Turn-On Delay Time10 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.8 mm
Length6.7 mm
Width6.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità