onsemi NDS356AP
Obsolete
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Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-09-01
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2022-01-31
LTD Date2023-01-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
Parti correlate
Diodes Inc.ZXM61N03FTA
ZXM61N03F Series 30 V 1.4 A 220 mOhm N-Channel Enhancement Mode Mosfet-SOT-23-3
InfineonBSS316NH6327XTSA1
Power MOSFET, N Channel, 30 V, 1.4 A, 160 mOhm, SOT-23, 3 Pins, Surface Mount
InfineonBSS306NH6327XTSA1
Transistor: N-MOSFET; unipolar; 20V; 2.3A; 0.041ohm; 0.5W; -55+150 deg.C; SMD; SOT23
Descrizioni
Descrizioni di onsemi NDS356AP fornite dai suoi distributori.
Trans MOSFET P-CH 30V 1.1A 3-Pin SOT-23 T/R / MOSFET P-CH 30V 1.1A SSOT3
-30V P-Channel Logic Level Enhancement Mode Field Effect Transistor
P-Channel 30 V 0.3 Ohm SMT Enhance Mode Field Effect Transistor - SSOT-3
MOSFET, P SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: 1.1A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.6V; Power Dissipatio
MOSFET, P SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:1.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):300mohm; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23 (TO-236); Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS356AP; Tape Width:8mm; Termination Type:SMD; Voltage Vgs th Max:-2.5V
SuperSOT™-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)1.1 A
Current Rating-1.1 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time17 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance280 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-2 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max200 mΩ
Resistance300 mΩ
Rise Time17 ns
Schedule B8541210080
TerminationSMD/SMT
Turn-Off Delay Time53 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.12 mm
Width3.05 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità