MOSFET, N, SMD, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:1.6A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:4.5V

element14 APAC

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

Fairchild Semiconductor

Immagini

Jameco (USA)

Newark

Conrad

Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

NDS355N.

Cronologia dell'inventario

Nessun dato disponibile

Modelli CAD

Scarica il simbolo, l'impronta e il 3D STEP

Parti alternative

0 parti disponibili

Specifiche tecniche

Physical

Case/PackageSOT-23-3

MountSurface Mount

Number of Pins3

Number of Terminals3

Weight30 mg

Technical

Continuous Drain Current (ID)1.6 A

Current Rating1.6 A

Drain to Source Breakdown Voltage30 V

Drain to Source Resistance85 mΩ

Drain to Source Voltage (Vdss)30 V

Element ConfigurationSingle

Fall Time14 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance245 pF

Max Junction Temperature (Tj)150 °C

Max Operating Temperature150 °C

Max Power Dissipation500 mW

Min Breakdown Voltage30 V

Min Operating Temperature-55 °C

Number of Channels1

Number of Elements1

Power Dissipation500 mW

Rds On Max85 mΩ

Resistance125 mΩ

Rise Time14 ns

Schedule B8541210080

Turn-Off Delay Time12 ns

Turn-On Delay Time15 ns

Voltage Rating (DC)30 V

Dimensions

Height1.12 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi NDS355N.

Upverter

Technical Drawing1 pagina6 anni fa

IHS

Newark

onsemi

Jameco (USA)

Conformità

Classificazione ambientale

China RoHSCompliant

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCYes

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement3 pagine12 anni fa

Materials Sheet3 pagine12 anni fa

Reach Statement4 pagine10 anni fa

Materials Sheet3 pagine10 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A