onsemi NDB5060L

N-Channel Logic Level Enhancement Mode Field Effect Transistor 60V, 26A, 35mΩ

Trans MOSFET N-CH 60V 26A Automotive 3-Pin(2+Tab) D2PAK T/R

68W(Tc) 16V 2V@ 250µA 24nC@ 5 V 1individualNChannel 60V 35mΩ@ 13A,10V 26A 840pF@30V D2PAK，TO-263 SMD mount 10.67mm*9.65mm*4.83mm

N-Channel 60 V 50 mO 3.7 W Surface Mount Power Mosfet - TO-263

Power Field-Effect Transistor, 26A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.