onsemi HUF75321S3S

N-channel Single With Built-in Diode TO-263AB Silicon Mosfet Transistor 35A 55V 0.034 Ohm
$ 0.417
Obsolete
Scheda dati

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DistributorSKUMinPkg
Rochester ElectronicsHUF75321S3S1204
1d
Microchip USAHUF75321S3S138600Tray
16h
Win SourceWS-HUF75321S3S30565
31m
RC ElectronicsHUF75321S3S32.0971
>1wk
QUARKTWIN TECHNOLOGY LTD
2
HUF75321S3SContatto
>1wk

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi HUF75321S3S.

IHS

Datasheet10 pagine24 anni fa

Mouser

Newark

Cronologia dell'inventario

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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-06-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2009-03-09
LTD Date2009-09-09

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Descrizioni

Descrizioni di onsemi HUF75321S3S fornite dai suoi distributori.

N-CHANNEL SINGLE WITH BUILT-IN DIODE TO-263AB SILICON Mosfet Transistor 35A 55V 0.034Ohm
Fly-Wing Technology
Trans MOSFET N-CH 55V 35A 3-Pin(2+Tab) TO-263AB Rail
Avnet
35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs
Onlinecomponents.com
35 A 55 V 0.034 ohm N-CHANNEL Si POWER MOSFET TO-263AB
Component Stockers USA
LDO Voltage Regulators 150mA Low Noise Hi 2.8V 6.3uVRMS
Utmel Electronic
Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:35A; On Resistance, Rds(on):34mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:Yes RoHS Compliant: Yes
Newark

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