onsemi MUN5330DW1T1G
$ 0.06
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MUN5330DW1T1G | 51.000 | 3K | 1d | ||||||||
| Newark | MUN5330DW1T1G | 3636 | 5 | Cut Tape | ||||||||
| Verical | MUN5330DW1T1G | 959 | 247 | |||||||||
| Arrow Electronics | MUN5330DW1T1G | 3000 | 3K | |||||||||
| Rochester Electronics | MUN5330DW1T1G | 423.801 | 22h |
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Tendenza a 3 mesi: -1.61%
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Schede tecniche e documenti
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Questo componente
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Price @ 1000
$ 0.06
$ 0.055
Stock
1,546,081
505,192
Authorized Distributors
6
2
Mount
-
-
Case/Package
SOT-363-6
-
Polarity
NPN, PNP
NPN, PNP
Collector Emitter Breakdown Voltage
50 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
250 mV
-
hFE Min
3
3
Power Dissipation
187 mW
187 mW
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiMUN5230DW1T1G
ON SEMI MUN5230DW1T1G DUAL NPN BIPOLAR TRANSISTOR, 0.1 A, 50 V, 6-PIN SOT-363
onsemiMUN5314DW1T1G
Bipolar Pre-Biased / Digital Transistor, BRT, NPN and PNP Complement, 50 V, 50 V, 100 mA, 10 kohm
Descrizioni
Descrizioni di onsemi MUN5330DW1T1G fornite dai suoi distributori.
ON SEMI MUN5330DW1T1G DUAL NPN+PNP BIPOLAR TRANSISTOR,0.1 A,50V,6-PIN SOT-363
NPN AND PNP SILICON SURFACE MOUNT TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, NPN and PNP, Silicon
MUN Series 50 V 100 mA 1 kOhm NPN/PNP Dual Bias Resistor Transistor - SOT-363
100 mA 50 V 2 CHANNEL NPN AND PNP Si SMALL SIGNAL TRANSISTOR
Trans Digital BJT NPN/PNP 50V 0.1A 385mW 6-Pin SC-88 T/R
Complementary Bipolar Digital Transistor (BRT)
250mV@ 5mA,10mA 1 NPN,1 PNP - Pre-Biased (Dual) 385mW 6V 500nA 50V 50V 100mA SC-88-6 2mm*1.25mm*900¦Ìm
Transistor Polarity:Npn And Pnp Complement; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:50V; Continuous Collector Current:100Ma; Base Input Resistor R1:1Kohm; Base Emitter Resistor R2:1Kohm Rohs Compliant: Yes |Onsemi MUN5330DW1T1G.
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.61%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-363-6
Number of Pins6
Number of Terminals6
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)6 V
hFE Min3
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Frequency10 kHz
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation385 mW
Min Operating Temperature-55 °C
Number of Elements2
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN, PNP
Power Dissipation187 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MUN5330DW1T1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità