onsemi MUN5211T1G
$ 0.04
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MUN5211T1G | 117.000 | 3K | 16h | ||||||||
| Newark | MUN5211T1G | 42.105 | 5 | Cut Tape | ||||||||
| Arrow Electronics | MUN5211T1G | 13.829 | 1 | |||||||||
| Verical | MUN5211T1G | 21.000 | 3K | |||||||||
| Future Electronics | MUN5211T1G | 21.000 | 3K | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -3.54%
Modelli CAD
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1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MUN5211T1G.
Modelli CAD
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Questo componente
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Price @ 1000
$ 0.04
$ 0.044
Stock
6,680,553
156,687
Authorized Distributors
6
2
Mount
-
-
Case/Package
SOT-323-3
-
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
-
Max Collector Current
100 mA
100 mA
Transition Frequency
-
-
Collector Emitter Saturation Voltage
-
-
hFE Min
35
35
Power Dissipation
310 mW
202 mW
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount SOT-323
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Descrizioni
Descrizioni di onsemi MUN5211T1G fornite dai suoi distributori.
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Bipolar Transistors (BJT); MUN5211T1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
DIGITAL TRANSISTOR (BRT) Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
MUN5211 Series 50 V 100 mA R1-10 kO R2-10 kO NPN Digital Transistor - SOT-323
NPN Bipolar Digital Transistor (BRT)
35@5mA,10V 1 NPN - Pre Biased 202mW 100mA 50V 500nA SOT-323(SC-70) Digital Transistors ROHS
Trans Digital BJT NPN 50V 100mA 310mW 3-Pin SC-70 T/R
Bipolar Transistors - Pre-Biased SS BR XSTR NPN 50V
TRANSISTOR, RF, NPN, 50V, SOT-323-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 10kohm;
Brt Transistor, 50V, 10K/10Kohm, Sc70, Full Reel; Tensión Colector Emisor V(Br)Ceo:50V; Intensidad De Collector Continua Ic:100Ma; Resitencia Básica De Entrada R1:10Kohm; Resistor R2 Base-Emisor:10Kohm; Núm. De Contactos:3 |Onsemi MUN5211T1G
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -3.54%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-323-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min35
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation310 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation310 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MUN5211T1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità