onsemi MUN2113T1G
$ 0.034
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SKU
Min
Pkg
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Cronologia dell'inventario
Tendenza a 3 mesi: -32.48%
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1 parte disponibile
Schede tecniche e documenti
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Questo componente
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Price @ 1000
$ 0.034
$ 0.037
$ 0.037
Stock
1,402,148
4,485,684
4,485,684
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SC
SOT-23-3
SOT-23-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
-50 V
-50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
250 mV
250 mV
250 mV
hFE Min
80
80
80
Power Dissipation
338 mW
246 mW
246 mW
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-04-23
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descrizioni
Descrizioni di onsemi MUN2113T1G fornite dai suoi distributori.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
PNP Bipolar Digital Transistor (BRT)
MUN Series 50 V 100 mA 47 kOhm PNP Silicon Bias Resistor Transistor - SC-59
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Bipolar Transistors - Pre-Biased SS BR XSTR PNP 50V
TRANS, AEC-Q101, PNP, -50V, -0.1A, SC-59; Digital Transistor Polarity:Single PNP; Collector Emitter Voltage V(br)ceo:-50V; Continuous Collector Current Ic:-100mA; Base Input Resistor R1:47kohm; Base-Emitter Resistor R2:4
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-59 package which is designed for low power surface mount applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -32.48%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSC
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating-100 mA
Element ConfigurationSingle
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation338 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityPNP
Power Dissipation338 mW
Schedule B8541210080
Voltage Rating (DC)-50 V
Dimensions
Height1.09 mm
Length2.9 mm
Width1.5 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MUN2113T1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità