onsemi MMUN2232LT1G
$ 0.038
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | MMUN2232LT1G | 1.374.000 | 3K | Tape & Reel | ||||||||
| Avnet | MMUN2232LT1G | 1.278.000 | 3K | 4d | ||||||||
| Newark | MMUN2232LT1G | 476 | 1 | Cut Tape | ||||||||
| Verical | MMUN2232LT1G | 2.370.000 | 30K | |||||||||
| Arrow Electronics | MMUN2232LT1G | 12.135 | 1 |
Cronologia dell'inventario
Tendenza a 3 mesi: -11.31%
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Schede tecniche e documenti
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Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-07-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
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onsemiMMUN2212LT1G
Bipolar Transistors (BJT); MMUN2212LT1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
Diodes Inc.DDTC143ECA-7-F
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 4.7 kohm
Diodes Inc.DDTC114ECA-7-F
DDTC114CA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-23-3
Diodes Inc.DDTC114YCA-7-F
DDTC114YCA Series NPN 50 V 100 mA Digital Transistor Surface Mount - SOT-23-3
Descrizioni
Descrizioni di onsemi MMUN2232LT1G fornite dai suoi distributori.
Bipolar Transistors (BJT); MMUN2232LT1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
MMUN Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SOT-23-3
R1 = 4.7 KILO OHM, R2 = 4.7 KILO OHM DIGITAL NPN TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMUN2232LT1G NPN DIGITAL TRANSISTOR,100 MA 50V 4.7 KOHMS, RATIO OF 1,3-PIN SOT-23
15@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
250mV@ 1mA,10mA NPN - Pre-Biased 400mW 5V 500nA 50V 50V 100mA SOT-23-3,TO-236 2.9mm*1.3mm*1mm
NPN Bipolar Digital Transistor (BRT)
Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R
Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:4.7Kohm; Base Emitter Resistor R2:4.7Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MMUN2232LT1G.
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -11.31%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min15
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation400 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation400 mW
Schedule B8541100050
Voltage Rating (DC)50 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MMUN2232LT1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità