onsemi MMUN2211LT1G
$ 0.031
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MMUN2211LT1G | 1.554.000 | 3K | 2d | ||||||||
| Future Electronics | MMUN2211LT1G | 435.000 | 3K | Tape & Reel | ||||||||
| Newark | MMUN2211LT1G | 9082 | 1 | Cut Tape | ||||||||
| Verical | MMUN2211LT1G | 531.000 | 3K | |||||||||
| Arrow Electronics | MMUN2211LT1G | 126.140 | 1 |
Cronologia dell'inventario
Tendenza a 3 mesi: -6.15%
Modelli CAD
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Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MMUN2211LT1G.
Modelli CAD
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|---|---|---|---|
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Questo componente
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Price @ 1000
$ 0.031
$ 0.033
$ 0.033
Stock
70,917,121
25,051,602
25,051,602
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
250 mV
250 mV
250 mV
hFE Min
35
35
35
Power Dissipation
246 mW
246 mW
246 mW
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-07-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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Descrizioni
Descrizioni di onsemi MMUN2211LT1G fornite dai suoi distributori.
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Bipolar Transistors (BJT); MMUN2211LT1G; ON SEMICONDUCTOR; NPN; 3; 50 V; 100 mA
Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
MMUN2211LT1G NPN DIGI TRANSISTOR, 100MA 50 V 10 KOHM, RATIO OF 1, 3-PIN SOT-23
35@5mA,10V 1 NPN - Pre Biased 246mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
MMUN2211L Series 1.8 V 100 mA SMT NPN-Pre-Biased Digital Transistor - SOT-23
Bias Resistor Transistor, Full Reel; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:10Kohm; No. Of Pins:3 Pin Rohs Compliant: Yes |Onsemi MMUN2211LT1G.
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -6.15%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min35
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation400 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation246 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height1.11 mm
Length2.9 mm
Width1.3 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MMUN2211LT1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità