onsemi MMUN2216LT1G
$ 0.067
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Cronologia dell'inventario
Tendenza a 3 mesi: +95.00%
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Schede tecniche e documenti
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-07-29
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiMMUN2241LT1G
NPN Pre-Biased Transistor 400mW 500nA 50V 100mA SOT-23-3 TO-236 SMD 2.9mm × 1.3mm × 940μm
onsemiMMUN2215LT1G
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236
onsemiMMUN2211LT1G
Bipolar Pre-Biased / Digital Transistor, BRT, Single NPN, 50 V, 100 mA, 10 kohm, 10 kohm
Diodes Inc.DDTC143TCA-7-F
DDTC143 Series 50 V 100 mA 200 mW NPN Small Signal Transistor - SOT-23-3
Diodes Inc.DDTC114TCA-7-F
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW
Descrizioni
Descrizioni di onsemi MMUN2216LT1G fornite dai suoi distributori.
MMUN Series 50 V 100 mA 4.7 kOhm NPN Silicon Bias Resistor Transistor - SOT-23
MMUN2216LT1G NPN DIGI TRANSISTOR,100MA 50V 4.7 KOHM, RATIO OF NONE,3-PIN SOT-23
160@5mA,10V 1 NPN - Pre Biased 400mW 100mA 50V 500nA SOT-23(TO-236) Digital Transistors ROHS
NPN Bipolar Digital Transistor (BRT)
onsemi NPN Digital Transistor SOT-23 SMD Ic=100mA Vceo=50V
Trans Digital BJT NPN 50V 100mA 400mW 3-Pin SOT-23 T/R
TRANSISTOR, RF, NPN, 50V, SOT-23-3; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resis
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +95.00%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageSOT-23-3
Contact PlatingTin
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
hFE Min160
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Output Current100 mA
Max Power Dissipation400 mW
Min Operating Temperature-55 °C
Number of Elements1
Operating Supply Voltage50 V
PackagingTape and Reel
PolarityNPN
Power Dissipation246 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height940 µm
Length2.9 mm
Width1.3 mm
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi MMUN2216LT1G.
Conformità
Classificazione ambientale
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità