onsemi MMUN2116LT1G

on Semi MMUN2116LT1G PNP Bipolar Transistor, 0.1 A, 50 V, 3-PIN SOT-23
$ 0.037
Production
Pagina del produttoreScheda dati

Prezzo e stock

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi MMUN2116LT1G.

element14 APAC

Datasheet11 pagine9 anni fa
Datasheet12 pagine12 anni fa

IHS

RS (Formerly Allied Electronics)

Farnell

Future Electronics

Cronologia dell'inventario

Trend di 3 mesi:
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Parti alternative

Price @ 1000
$ 0.037
$ 0.037
$ 0.037
Stock
1,178,021
5,588,249
5,588,249
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
SOT-23-3
SOT-23-3
SOT-23-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
50 V
50 V
50 V
Max Collector Current
100 mA
100 mA
100 mA
Transition Frequency
-
-
-
Collector Emitter Saturation Voltage
250 mV
250 mV
250 mV
hFE Min
160
160
160
Power Dissipation
246 mW
246 mW
246 mW

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-10-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrizioni

Descrizioni di onsemi MMUN2116LT1G fornite dai suoi distributori.

ON SEMI MMUN2116LT1G PNP BIPOLAR TRANSISTOR, 0.1 A, 50 V, 3-PIN SOT-23
PNP DIGITAL TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB
250mV@ 1mA,10mA PNP - Pre-Biased 400mW 500nA 50V 100mA SOT-23-3,TO-236 2.9mm*1.3mm*940¦Ìm
MMUN2116LT series 50V 100mA 3-Pin SOT-23 Trans Digital BJT PNP
PNP Bipolar Digital Transistor (BRT)
PNP - Pre-Biased 246mW 100mA 50V SOT-23(SOT-23-3) Digital Transistors ROHS
BIAS RESISTOR TRANSISTOR; COLLECTOR EMIT; Digital Transistor Polarity: Single PNP; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -;
Bias Resistor Transistor; Tensión Colector Emisor V(Br)Ceo:50V; Intensidad De Collector Continua Ic:100Ma; Resitencia Básica De Entrada R1:4.7Kohm; Resistor R2 Base-Emisor:-; Ratio De La Resistencia, R1/R2:-; Núm. De Contactos:3 |Onsemi MMUN2116LT1G
This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package whi designed for low power surface mount applications.

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • MMUN2116LT1G.