onsemi MMBTH10
$ 0.019
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Modelli CAD
Scarica il simbolo onsemi MMBTH10, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | SimboloImpronta | 3D | Scarica |
 Ultra Librarian | SimboloImpronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.019
$ 0.039
$ 0.039
Stock
11,031,360
6,482,862
6,482,862
Authorized Distributors
4
6
6
Collector Emitter Breakdown Voltage
25 V
25 V
25 V
Continuous Collector Current
50 mA
-
-
Collector Base Voltage (VCBO)
30 V
30 V
30 V
Frequency
650 MHz
650 MHz
650 MHz
Max Power Dissipation
225 mW
300 mW
300 mW
Transition Frequency
650 MHz
650 MHz
650 MHz
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Mount
Surface Mount
-
-
Polarity
NPN
NPN
NPN
Gain Bandwidth Product
650 MHz
650 MHz
650 MHz
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1989-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2018-06-22
LTD Date2018-12-22
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
onsemiKSC3123RMTF
Tape & Reel (TR) Surface Mount NPN Single RF Transistor 60 @ 5mA 10V 50mA 150mW 20dB-23dB
onsemiKSC2715YMTF
Tape & Reel (TR) Surface Mount NPN Bipolar (BJT) Transistor 120 @ 2mA 12V 50mA 150mW 400MHz
Diodes Inc.MMBT4124-7-F
MMBT4124 Series 25 V 200 mA 300 mW NPN Small Signal Transistor - SOT-23-3
Descrizioni
Descrizioni di onsemi MMBTH10 fornite dai suoi distributori.
MMBTH10 Series NPN 225 mW 25 V 50 mA SMT RF Transistor - SOT-23-3
TRANSISTOR, RF, NPN, 25V, 650MHZ, SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 25V; Transition Frequency ft: 650MHz; Power Dissipation Pd: 225mW; DC Collector Current: 50mA; DC Current Gain hFE: 60hFE;
Transistor; Transistor Type:RF Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.225W; DC Current Gain Min (hfe):60; Package/Case:SOT-323; C-E Breakdown Voltage:25V; DC Collector Current:0.05A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 mA to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage25 V
Collector Emitter Voltage (VCEO)25 V
Continuous Collector Current50 mA
Current Rating50 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)3 V
Frequency650 MHz
Gain Bandwidth Product650 MHz
hFE Min60
Max Breakdown Voltage25 V
Max Collector Current50 mA
Max Frequency650 MHz
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation225 mW
Schedule B8541210080
Transition Frequency650 MHz
Voltage Rating (DC)25 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità