onsemi MMBTA14
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.063
Stock
328,926
2,923,392
Authorized Distributors
1
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
Max Collector Current
300 mA
300 mA
Transition Frequency
125 MHz
125 MHz
Collector Emitter Saturation Voltage
1.5 V
1.5 V
hFE Min
10000
20000
Power Dissipation
350 mW
-
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1994-01-01
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2019-01-26
LTD Date2019-07-26
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
Parti correlate
Diodes Inc.MMBTA14-7-F
MMBTA14 Series NPN 30 V 300 mW Darlington Transistor Surface Mount - SOT-23-3
Diodes Inc.BC848C-7-F
Bipolar (BJT) Single Transistor, NPN, 30 V, 100 mA, 300 mW, SOT-23, Surface Mount
Descrizioni
Descrizioni di onsemi MMBTA14 fornite dai suoi distributori.
BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, NPN, 30 V, 125 MHZ, 350 MW, 1.2 A, 20000 ROHS COMPLIANT: YES
MMBTA14 Series 30 V CE Breakdown 1.2 A NPN Darlington Transistor - SOT-23
Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Tape & Reel (TR) Surface Mount NPN - Darlington Single Bipolar (BJT) Transistor 20000 @ 100mA 5V 1.2A 350mW 125MHz
Trans Darlington NPN 30V 1.2A 3-Pin SOT-23 T/R
NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
TRANSISTOR NPN DARL 0.3A 30V SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:350mW; DC Collector Current:1.2A; DC Current Gain hFE:20000; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:125MHz; Hfe Min:10000; Package / Case:SOT-23; Power Dissipation Pd:350mW; Termination Type:SMD; Transistor Type:Darlington
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)30 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage1.5 V
Collector Emitter Voltage (VCEO)30 V
Current Rating1.2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
hFE Min10000
Max Breakdown Voltage30 V
Max Collector Current300 mA
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
Transition Frequency125 MHz
Voltage Rating (DC)30 V
Dimensions
Height930 µm
Length2.92 mm
Width1.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità