onsemi MMBT5551
$ 0.065
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -2.13%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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1 parte disponibile
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Scarica il simbolo onsemi MMBT5551, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
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Questo componente
Parti alternative
Price @ 1000
$ 0.065
$ 0.042
$ 0.042
Stock
2,523,134
55,676,654
55,676,654
Authorized Distributors
5
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
160 V
160 V
160 V
Max Collector Current
600 mA
60 mA
60 mA
Transition Frequency
100 MHz
-
-
Collector Emitter Saturation Voltage
200 mV
200 mV
200 mV
hFE Min
30
30
30
Power Dissipation
350 mW
225 mW
225 mW
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1989-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2018-06-22
LTD Date2018-12-22
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
onsemiKST5551MTF
KST Series NPN 350 mW 160 V 600 mA Surface Mount Epitaxial Transistor - SOT-23
Diodes Inc.MMBT5551-7-F
MMBT5551 Series NPN 160 V 300 mW Small Signal Transistor Surface Mount- SOT-23-3
Descrizioni
Descrizioni di onsemi MMBT5551 fornite dai suoi distributori.
600 mA, 160 V NPN General Purpose Bipolar Junction Transistor Legacy Fairchild Part number
Trans General Purpose BJT NPN 160 Volt 0.6A 3-Pin SOT-23 Tape and Reel
Trans GP BJT NPN 160V 0.6A 350mW 3-Pin SOT-23 T/R / TRANS NPN 160V 0.6A SOT-23
MMBT5551 Series 160 V CE Breakdown 0.6 A NPN General Purpose Amplifier - SOT-23
NPN GENERAL PURPOSE AMPLIFIER Small Signal Bipolar Transistor, 0.6A I(C), 160V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):80; Package/Case:SOT-323; C-E Breakdown Voltage:160V; DC Collector Current:0.6A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR,NPN,160V,0.6A,SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:160V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:350mW; DC Collector Current:600mA; DC Current Gain hFE:250; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Continuous Collector Current Ic:600mA; Current Ic hFE:250mA; DC Current Gain Max (hfe):250; Gain Bandwidth ft Typ:300MHz; Hfe Min:80; Noise Figure Typ:8dB; Package / Case:SOT23; Power Dissipation Ptot Max:350mW; RF Transistor Case:SOT-23; Termination Type:SMD; Test Frequency:15.7kHz
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -2.13%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)180 V
Collector Emitter Breakdown Voltage160 V
Collector Emitter Saturation Voltage200 mV
Collector Emitter Voltage (VCEO)160 V
Current Rating600 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product100 MHz
hFE Min30
Max Breakdown Voltage160 V
Max Collector Current600 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
Transition Frequency100 MHz
Voltage Rating (DC)160 V
Dimensions
Height1.2 mm
Length2.92 mm
Width1.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità