onsemi MMBT5087
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | MMBT5087... | 0 | 5 | Cut Tape | 1d | |||||||
| Win Source | WS-MMBT5087 | 140.850 | 3525 | 1h | ||||||||
| Worldway Electronics | MMBT5087 | 10.993 | 7 | Tape & Reel | 1d | |||||||
| Fmall Co., Limited | MMBT5087 | 10.060 | >1wk | |||||||||
| Voyager Components | MMBT5087-FAIRCHILD-02 | 4533 | 7h |
Modelli CAD
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.048
$ 0.048
Stock
325,990
12,192,101
12,192,101
Authorized Distributors
1
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23-3
SOT-23-3
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
-50 V
-50 V
-50 V
Max Collector Current
100 mA
50 mA
50 mA
Transition Frequency
40 MHz
40 MHz
40 MHz
Collector Emitter Saturation Voltage
-300 mV
-300 mV
-300 mV
hFE Min
250
250
250
Power Dissipation
350 mW
-
-
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1989-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
Diodes Inc.BC856B-13-F
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, PNP, Silicon
Diodes Inc.BC857C-7-F
Bipolar (BJT) Single Transistor, PNP, 45 V, 100 mA, 300 mW, SOT-23, Surface Mount
Descrizioni
Descrizioni di onsemi MMBT5087 fornite dai suoi distributori.
MMBT5087 Series 50 V CE Breakdown 0.1 A PNP General Purpose Amplifier - SOT-23
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
Trans GP BJT PNP 50V 0.1A 3-Pin SOT-23 T/R
MMBT5087,@TRANSISTOR, MMBT5087 , 2Q, SQT-23 PNP SILICON 50V
TRANSISTOR, BIPOL, PNP, -50V, SOT-23-3
This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50 mA.
Bipolar Transistor; Transistor Polarity:PNP; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):150; Package/Case:SOT-23; C-E Breakdown Voltage:50V; DC Collector Current:0.1A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, BIPOL, PNP, -50V, SOT-23-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -50V; Transition Frequency ft: 40MHz; Power Dissipation Pd: 350mW; DC Collector Current: -100mA; DC Current Gain hFE: 250hFE
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)-50 V
Collector Emitter Breakdown Voltage-50 V
Collector Emitter Saturation Voltage-300 mV
Collector Emitter Voltage (VCEO)50 V
Current Rating-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-3 V
Frequency40 MHz
Gain Bandwidth Product40 MHz
hFE Min250
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation350 mW
Transition Frequency40 MHz
Voltage Rating (DC)-50 V
Dimensions
Height1.2 mm
Length6.35 mm
Width6.35 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità