onsemi MMBT3904
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Modelli CAD
Scarica il simbolo onsemi MMBT3904, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
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Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.034
$ 0.034
Stock
1,267,133
73,619,147
73,619,147
Authorized Distributors
2
6
6
Mount
Surface Mount
-
-
Case/Package
SOT-23
SOT-23
SOT-23
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
40 V
40 V
40 V
Max Collector Current
200 mA
200 mA
200 mA
Transition Frequency
300 MHz
300 MHz
300 MHz
Collector Emitter Saturation Voltage
300 mV
200 mV
200 mV
hFE Min
30
30
30
Power Dissipation
350 mW
225 mW
225 mW
Supply Chain
Country of OriginPhilippines
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1989-01-01
Lifecycle StatusObsolete (Last Updated: 21 hours ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 21 hours ago)
Parti correlate
Diodes Inc.MMBT3904-7-F
Transistor General Purpose BJT NPN 40 Volt 0.2A Automotive 3-Pin SOT-23
Diodes Inc.MMBT2222A-7-F
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 300 mW, SOT-23, Surface Mount
Diodes Inc.MMBT4401-7-F
Bipolar (BJT) Single Transistor, NPN, 40 V, 600 mA, 310 mW, SOT-23, Surface Mount
Descrizioni
Descrizioni di onsemi MMBT3904 fornite dai suoi distributori.
MMBT3904 Series 40 V CE Breakdown 0.2 A NPN General Purpose Amplifier - SOT-23
NPN GENERAL-PURPOSE AMPLIFIER Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
Transistor GP BJT NPN 40V 0.2A 3-Pin SOT-23 T/R
300mV@ 5mA,50mA NPN 350mW 6V 100nA 60V 40V 200mA SOT-23-3 2.92mm*1.3mm*930¦Ìm
This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
TRANSISTOR, NPN SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 40V; Transition Frequency ft: 300MHz; Power Dissipation Pd: 350mW; DC Collector Current: 200mA; DC Current Gain hFE: 300hFE; Transistor Case
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):30; Package/Case:SOT-23; C-E Breakdown Voltage:40V; DC Collector Current:0.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
TRANSISTOR, NPN, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:40V; Power Dissipation Pd:350mW; DC Collector Current:200mA; DC Current Gain hFE:300; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Continuous Collector Current Ic Max:200mA; Current Ic Continuous a Max:200mA; Current Ic hFE:10mA; Device Marking:BT3904; Gain Bandwidth ft Min:300MHz; Gain Bandwidth ft Typ:300MHz; Hfe Min:100; No. of Transistors:1; Noise Factor Max:5dB; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:1A; Termination Type:SMD; Voltage Vcbo:60V
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage40 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)40 V
Current Rating200 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency300 MHz
Gain Bandwidth Product300 MHz
hFE Min30
Max Breakdown Voltage40 V
Max Collector Current200 mA
Max Frequency300 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation225 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
TerminationSMD/SMT
Transition Frequency300 MHz
Voltage Rating (DC)40 V
Dimensions
Height1.2 mm
Length2.92 mm
Width1.3 mm
Conformità
Classificazione ambientale
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Dichiarazioni di conformità