onsemi MJD45H11TM
Obsolete
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Farnell | MJD45H11TM | 0 | 1 | Cut Tape | 1d | |||||||
| Component Stockers USA | MJD45H11TM | 22.951 | 20h | |||||||||
| Win Source | WS-MJD45H11TM | 10.000 | 115 | 7h | ||||||||
| Worldway Electronics | MJD45H11TM | 28.176 | 7 | Tape & Reel | 6h | |||||||
| Aztech | MJD45H11TM | 352 | 2h |
Modelli CAD
Scarica il simbolo onsemi MJD45H11TM, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 SnapEDA | Impronta | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.424
$ 0.424
Stock
286,366
819,236
819,236
Authorized Distributors
1
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
80 V
80 V
80 V
Max Collector Current
8 A
8 A
8 A
Transition Frequency
40 MHz
40 MHz
40 MHz
Collector Emitter Saturation Voltage
-1 V
-1 V
-1 V
hFE Min
40
40
40
Power Dissipation
1.75 W
1.75 W
1.75 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2020-02-01
LTD Date2021-02-01
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Descrizioni
Descrizioni di onsemi MJD45H11TM fornite dai suoi distributori.
8 A, 80 V PNP Power Bipolar Junction Transistor
MJD Series PNP 1.75 W 80 V 8 A SMT Epitaxial Silicon Transistor - TO-252-3
PNP EPITAXIAL SILICON TRANSISTOR Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
Trans GP BJT PNP 80V 8A 3-Pin (2+Tab) DPAK T/R
TRANSISTOR, BIPOL, PNP, -80V, TO-252-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: 40MHz; Power Dissipation Pd: 1.75W; DC Collector Current: -8A; DC Current Gain hFE: 40hFE; Tr
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Collector Base Voltage (VCBO)-80 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage-1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating-8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
Frequency40 MHz
Gain Bandwidth Product40 MHz
hFE Min40
Max Breakdown Voltage80 V
Max Collector Current8 A
Max Frequency40 MHz
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityPNP
Power Dissipation1.75 W
Schedule B8541290080
Transition Frequency40 MHz
Voltage Rating (DC)-80 V
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità