onsemi MJD44H11T4G
$ 0.293
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | MJD44H11T4G | 25.000 | 2500 | 5h | ||||||||
| Newark | MJD44H11T4G | 930 | 1 | Cut Tape | ||||||||
| Arrow Electronics | MJD44H11T4G | 3857 | 1 | |||||||||
| Verical | MJD44H11T4G | 197.500 | 2500 | |||||||||
| Future Electronics | MJD44H11T4G | 32.500 | 2500 | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: +1.39%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Modelli CAD
Scarica il simbolo onsemi MJD44H11T4G, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
 EE Concierge | SimboloImpronta | ||
 SnapEDA | Impronta | 3D | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 0.293
$ 0.411
$ 0.411
Stock
8,881,288
609,508
609,508
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
DPAK
DPAK
DPAK
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
80 V
Max Collector Current
8 A
8 A
8 A
Transition Frequency
85 MHz
85 MHz
85 MHz
Collector Emitter Saturation Voltage
1 V
1 V
1 V
hFE Min
40
40
40
Power Dissipation
1.75 W
1.75 W
1.75 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1995-08-31
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiMJD44H11RLG
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
onsemiNJVMJD44H11T4G
8 A, 80 V Npn Bipolar Power Transistor/ Reel Rohs Compliant: Yes |Onsemi NJVMJD44H11T4G
Descrizioni
Descrizioni di onsemi MJD44H11T4G fornite dai suoi distributori.
Bipolar (BJT) Single Transistor, NPN, 80 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Bipolar Transistors (BJT); MJD44H11T4G; ON SEMICONDUCTOR; NPN; 3; 80 V; 8 A
8 A, 80 V NPN Bipolar Power Transistor
ON Semi MJD44H11T4G NPN Bipolar Transistor; 8 A; 80 V; 3-Pin DPAK
MJD Series 80 V 8 A NPN Complementary Power Transistor - TO-252-3
Trans GP BJT NPN 80V 8A 1750mW 3-Pin(2+Tab) DPAK T/R
Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:8A; Power Dissipation:20W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:85Hz; Dc Current Gain Hfe Min:60Hfe Rohs Compliant: Yes |Onsemi MJD44H11T4G.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +1.39%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins3
Number of Terminals2
Weight4.535924 g
Technical
Collector Base Voltage (VCBO)5 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency85 MHz
Gain Bandwidth Product85 MHz
hFE Min40
Max Breakdown Voltage80 V
Max Collector Current8 A
Max Frequency85 MHz
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation1.75 W
Schedule B8541290080
Transition Frequency85 MHz
Voltage Rating (DC)80 V
Dimensions
Height2.38 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità