onsemi MJD3055TF

NPN Bipolar Power Transistor, 10 A, 60 V
Obsolete
Pagina del produttoreScheda dati

Prezzo e stock

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DistributorSKUMinPkg
Farnell
2
MJD3055TF01Cut Tape
1d
Win SourceWS-MJD3055TF200019
6h
Worldway ElectronicsMJD3055TF21.3307Tape & Reel
5h
RC ElectronicsMJD3055TF38.6401
>1wk
SHENGYU ELECTRONICSMJD3055TF17.1131
2d

Schede tecniche e documenti

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onsemi

Datasheet6 pagine15 anni fa
Datasheet6 pagine20 anni fa
Datasheet0 pagine0 anni fa

IHS

Farnell

element14 APAC

Fairchild Semiconductor

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Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2019-07-31
LTD Date2020-01-31
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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Descrizioni

Descrizioni di onsemi MJD3055TF fornite dai suoi distributori.

NPN Bipolar Power Transistor, 10 A, 60 V
onsemi
MJD3055 Series 60 V 10 A Surface Mount NPN Epitaxial Silicon Transistor - DPAK-3
Future Electronics
NPN EPITAXIAL SILICON TRANSISTOR Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin
ComSIT Distribution GmbH
Trans GP BJT NPN 60V 10A 3-Pin (2+Tab) DPAK T/R
Verical
TRANSISTOR, BIPOL, NPN, 60V, TO-252-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 60V; Transition Frequency ft: 2MHz; Power Dissipation Pd: 1.75W; DC Collector Current: 10A; DC Current Gain hFE: 5hFE; Transi
Farnell
Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:100V; Continuous Collector Current, Ic:10000mA; Collector Emitter Saturation Voltage, Vce(sat):1.1V; Power Dissipation, Pd:1750mW ;RoHS Compliant: Yes
Newark

Immagini

Augswan
Newark
Farnell
Conrad

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