onsemi MJD127T4G
$ 0.376
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SKU
Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: +0.65%
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Price @ 1000
$ 0.376
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$ 0.343
Stock
6,672,954
7,704,523
7,704,523
Authorized Distributors
6
6
6
Mount
-
Surface Mount
Surface Mount
Case/Package
DPAK
DPAK
DPAK
Polarity
PNP
PNP
PNP
Collector Emitter Breakdown Voltage
100 V
100 V
100 V
Max Collector Current
8 A
8 A
8 A
Transition Frequency
4 MHz
-
-
Collector Emitter Saturation Voltage
2 V
4 V
4 V
hFE Min
100
100
100
Power Dissipation
20 W
20 W
20 W
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Descrizioni
Descrizioni di onsemi MJD127T4G fornite dai suoi distributori.
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
8.0 A, 100 V PNP Darlington Bipolar Power Transistor
Bipolar Transistors (BJT); MJD127T4G; ON SEMICONDUCTOR; PNP; 100 V; 8 A; 3
MJD Series 100 V 8 A PNP Complementary Darlington Power Transistor - TO-252-3
ON SEMI MJD127T4G PNP DARLINGTON TRANSISTOR, 8 A 100 V HFE:100, 3-PIN DPAK
TRANS PNP DARL 100V 8A DPAK / Trans Darlington PNP 100V 8A 1750mW 3-Pin(2+Tab) DPAK T/R
DARLINGTON TRANSISTOR, PNP, -100V, D-PAK; DARLINGTON TRANSISTOR, PNP, -100V, D-PAK; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:100V; Transition Frequency ft:4MHz; Power Dissipation Pd:20W; DC Collector C
Transistor Polarity:PNP; No. of Pins:3Pins; Transistor Mounting:Surface Mount; Operating Temperature Max:150°C; Product Range:-; Qualification:-; Collector Emitter Voltage Max:100V; Continuous Collector Current:8A RoHS Compliant: Yes
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.65%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageDPAK
Contact PlatingTin
Number of Pins3
Number of Terminals2
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current8 A
Current Rating-8 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min100
Max Breakdown Voltage100 V
Max Collector Current8 A
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-65 °C
Number of Elements1
PackagingTape and Reel
PolarityPNP
Power Dissipation20 W
Schedule B8541290080
Transition Frequency4 MHz
Voltage Rating (DC)-100 V
Dimensions
Height2.38 mm
Length6.73 mm
Width6.22 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità