onsemi MJD112-1G

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
$ 0.469
Production
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Prezzo e stock

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DistributorSKUMinPkg
Future ElectronicsMJD112-1G7350Tube
Verical
8
MJD112-1G52575
Arrow Electronics
2
MJD112-1G12901
Master ElectronicsMJD112-1G43.20075
Onlinecomponents.comMJD112-1G43.20075Bulk

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi MJD112-1G.

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Datasheet8 pagine15 anni fa
Datasheet8 pagine20 anni fa

Master Electronics

Farnell

onsemi

DigiKey

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Parti alternative

Questo componente
Parti alternative
onsemiMJD112-1G
onsemiMJD112-001
Price @ 1000
$ 0.469
$ 0.175
Stock
1,068,941
50,237
Authorized Distributors
6
1
Mount
-
-
Case/Package
TO-251
TO-251
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
Max Collector Current
2 A
2 A
Transition Frequency
25 MHz
25 MHz
Collector Emitter Saturation Voltage
2 V
2 V
hFE Min
200
200
Power Dissipation
1.75 W
20 W

Supply Chain

Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

Parti correlate

onsemiMJD112-001
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Dettagli
onsemiKSH122ITU
Power Bipolar Transistor, 8A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-251AA, Plastic/Epoxy, 3 Pin
Dettagli
onsemi2SC4135T-E
Bipolar Transistor, (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
Dettagli

Descrizioni

Descrizioni di onsemi MJD112-1G fornite dai suoi distributori.

Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
IHS
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
onsemi
MJD Series 100 V 2 A Through Hole NPN Complementary Darlington Power Transistor
Future Electronics
ON SEMI MJD112-1G NPN DARLINGTON TRANSISTOR, 2 A 100 V HFE:1000, 3-PIN IPAK
RS (Formerly Allied Electronics)
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
North Star Micro
TRANSISTOR, NPN, 100V, 2A, TO-251; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 20W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transisto
Farnell
Darlington Transistor, Npn, 100V, Dpak-3; Transistor Polarity:Npn; Collector Emitter Voltage V(Br)Ceo:100V; Power Dissipation Pd:20W; Dc Collector Current:2A; Rf Transistor Case:To-252 (Dpak); No. Of Pins:3Pins; Product Range:- Rohs Compliant: Yes |Onsemi MJD112-1G
Newark

Immagini

Farnell
Augswan
Newark
RS (Formerly Allied Electronics)
TME
LZChips
Future Electronics
Rochester Electronics
JRH Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • MJD112-1G.