onsemi MJD112-1G
$ 0.529
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Min
Pkg
Prezzi all'ingrosso
Cronologia dell'inventario
Tendenza a 3 mesi: -4.02%
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Questo componente
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Price @ 1000
$ 0.529
$ 0.175
Stock
1,517,225
30,008
Authorized Distributors
6
1
Mount
-
-
Case/Package
TO-251
TO-251
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
100 V
100 V
Max Collector Current
2 A
2 A
Transition Frequency
25 MHz
25 MHz
Collector Emitter Saturation Voltage
2 V
2 V
hFE Min
200
200
Power Dissipation
1.75 W
20 W
Supply Chain
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiMJD112-001
Tube Through Hole NPN - Darlington Single Bipolar (BJT) Transistor 1000 @ 2A 3V 2A 1.75W 25MHz
Descrizioni
Descrizioni di onsemi MJD112-1G fornite dai suoi distributori.
Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
2.0 A, 100 V NPN Darlington Bipolar Power Transistor
MJD Series 100 V 2 A Through Hole NPN Complementary Darlington Power Transistor
ON SEMI MJD112-1G NPN DARLINGTON TRANSISTOR, 2 A 100 V HFE:1000, 3-PIN IPAK
Transistor, Npn, 100V, 2A, To-251; |Onsemi MJD112-1G
Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators converters and power amplifiers.
TRANSISTOR, NPN, 100V, 2A, TO-251; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: 25MHz; Power Dissipation Pd: 20W; DC Collector Current: 2A; DC Current Gain hFE: 200hFE; Transisto
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -4.02%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-251
Contact PlatingTin
Number of Pins4
Number of Terminals3
Technical
Collector Base Voltage (VCBO)100 V
Collector Emitter Breakdown Voltage100 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)100 V
Continuous Collector Current2 A
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min200
Max Collector Current2 A
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation1.75 W
Schedule B8541290080
Transition Frequency25 MHz
Voltage Rating (DC)100 V
Dimensions
Height6.22 mm
Length6.73 mm
Width2.38 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità