onsemi MJB44H11T4G
$ 0.626
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -33.62%
Modelli CAD
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1 parte disponibile
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Questo componente
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Price @ 1000
$ 0.626
$ 0.553
$ 0.553
Stock
312,020
275,906
275,906
Authorized Distributors
6
6
6
Mount
-
-
-
Case/Package
D2PAK
D2PAK
D2PAK
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
80 V
Max Collector Current
10 A
10 A
10 A
Transition Frequency
50 MHz
50 MHz
50 MHz
Collector Emitter Saturation Voltage
1 V
1 V
1 V
hFE Min
40
40
40
Power Dissipation
2 W
2 W
2 W
Supply Chain
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
NXP SemiconductorsBUJ105AB,118
Power Bipolar Transistor, 8A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Descrizioni
Descrizioni di onsemi MJB44H11T4G fornite dai suoi distributori.
Bipolar Power Transistor, NPN, 10 A, 80 V, 50 Watt
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
ON SEMI MJB44H11T4G NPN BIPOLAR TRANSISTOR, 10 A, 80 V, 3-PIN D2PAK
MJB Series 80 V 10 A Surface Mount NPN Complementary Power Transistor - D2PAK-3
80V 2W 10A NPN TO-263-2 Bipolar Transistors - BJT ROHS
Trans GP BJT NPN 80V 10A 2000mW 3-Pin(2+Tab) D2PAK T/R
POWER TRANSISTOR, NPN, 80V, D2-PAK; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 80V; Transition Frequency ft: 50MHz; Power Dissipation Pd: 50W; DC Collector Current: 10A; DC Current Gain hFE: 40hFE; Transisto
Power Transistor, Npn, 80V, D2-Pak, Full Reel; Transistor Polarity:Npn; Collector Emitter Voltage Max:80V; Continuous Collector Current:10A; Power Dissipation:50W; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Product Range:-Rohs Compliant: Yes |Onsemi MJB44H11T4G.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -33.62%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageD2PAK
Contact PlatingTin
Number of Pins3
Number of Terminals2
Technical
Collector Base Voltage (VCBO)5 V
Collector Emitter Breakdown Voltage80 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)80 V
Current Rating10 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency50 MHz
Gain Bandwidth Product50 MHz
hFE Min40
Max Breakdown Voltage80 V
Max Collector Current10 A
Max Frequency20 MHz
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency50 MHz
Voltage Rating (DC)80 V
Dimensions
Height4.83 mm
Length10.29 mm
Width9.65 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità