onsemi KSE13003H2ASTU

Bipolar (BJT) Single Transistor, NPN, 400 V, 4 MHz, 20 W, 1.5 A, 14
$ 0.714
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Schede tecniche e documenti

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IHS

Datasheet4 pagine18 anni fa

TME

onsemi

element14 APAC

Fairchild Semiconductor

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Price @ 1000
$ 0.714
$ 0.461
Stock
166,704
295,862
Authorized Distributors
4
6
Mount
Through Hole
Through Hole
Case/Package
TO-126
TO-126-3
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
400 V
400 V
Max Collector Current
1.5 A
1.5 A
Transition Frequency
4 MHz
4 MHz
Collector Emitter Saturation Voltage
500 mV
3 V
hFE Min
14
14
Power Dissipation
20 W
20 W

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-07-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusLIFETIME (Last Updated: 3 days ago)

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Descrizioni

Descrizioni di onsemi KSE13003H2ASTU fornite dai suoi distributori.

Bipolar (BJT) Single Transistor, NPN, 400 V, 4 MHz, 20 W, 1.5 A, 14
NPN 400 V 1.5 A 20 W Flange Mount Silicon Transistor - TO-126
Trans GP BJT NPN 400V 1.5A 20000mW 3-Pin(3+Tab) TO-126 Tube
Transistor GP BJT NPN 400V 1.5A TO126
RS APAC
Power Bipolar Transistor, 1.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin
TRANSISTOR, BIPOL, NPN, 400V, TO-225AA-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 400V; Transition Frequency ft: 4MHz; Power Dissipation Pd: 20W; DC Collector Current: 1.5A; DC Current Gain hFE: 14hFE; Tr

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