onsemi HUF75639S3ST
$ 1.257
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | HUF75639S3ST | 796 | 1 | Cut Tape | ||||||||
| Verical | HUF75639S3ST | 96.165 | 200 | |||||||||
| Rochester Electronics | HUF75639S3ST | 110.726 | 18h | |||||||||
| Onlinecomponents.com | HUF75639S3ST | 0 | 200 | Bulk | ||||||||
| Future Electronics | HUF75639S3ST | 0 | 800 | Tape & Reel |
Cronologia dell'inventario
Tendenza a 3 mesi: -1.27%
Modelli CAD
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| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
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 SnapEDA | Impronta | Scarica |
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Questo componente
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Price @ 1000
$ 1.257
$ 1.294
Stock
476,416
184,156
Authorized Distributors
6
3
Mount
Surface Mount
Surface Mount
Case/Package
TO-263-3
D2PAK
Drain to Source Voltage (Vdss)
100 V
100 V
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
-
-
Rds On Max
25 mΩ
25 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
200 W
200 W
Input Capacitance
2 nF
2 nF
Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
onsemiHUFA75639S3ST
56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs | MOSFET N-CH 100V 56A D2PAK
InfineonAUIRF3710ZS
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
Descrizioni
Descrizioni di onsemi HUF75639S3ST fornite dai suoi distributori.
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 56A D2PAK
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
200W(Tc) 20V 4V@ 250¦ÌA 130nC@ 20 V 1N 100V 25m¦¸@ 56A,10V 56A 2nF@25V D2PAK,TO-263 5.08mm
Transistor, mosfet, n-Channel,100V V(Br)Dss,56A I(D),to-263Ab Rohs Compliant: Yes |Onsemi HUF75639S3ST
N-Channel 100 V 0.025 Ohm UltraFET Power Mosfet - TO-263AB
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.27%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.31247 g
Technical
Continuous Drain Current (ID)56 A
Current Rating56 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation200 W
Rds On Max25 mΩ
Resistance25 mΩ
Rise Time60 ns
Turn-Off Delay Time20 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)100 V
Dimensions
Height5.08 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità