onsemi HUF75639P3
$ 1.376
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: +16.96%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Parti alternative
Questo componente
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Price @ 1000
$ 1.376
$ 1.16
Stock
179,164
27,663
Authorized Distributors
6
1
Mount
Through Hole
-
Case/Package
TO-263-3
-
Drain to Source Voltage (Vdss)
100 V
-
Continuous Drain Current (ID)
56 A
56 A
Threshold Voltage
4 V
-
Rds On Max
25 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
200 W
-
Input Capacitance
2 nF
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
Parti correlate
InfineonIRF3710ZPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 14Milliohms;ID 59A;TO-220AB;PD 160W;-55deg
InfineonIRF1310NPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.036Ohm;ID 42A;TO-220AB;PD 160W;VGS +/-20V
Descrizioni
Descrizioni di onsemi HUF75639P3 fornite dai suoi distributori.
Transistor HUF75639P3 N-Channel Power MOSFET 100Volt 56A TO-220AB
N-Channel 100 V 0.025 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
Trans MOSFET N-CH 100V 56A 3-Pin(3+Tab) TO-220AB Rail
100 V, 56 A, 0.025 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET,N CH,100V,56A,TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +16.96%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-263-3
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)56 A
Current Rating56 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance25 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation200 W
Rds On Max25 mΩ
Resistance25 mΩ
Rise Time60 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time20 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)100 V
Dimensions
Height20.4 mm
Length10.67 mm
Width4.83 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità