onsemi HUF75332P3
$ 1.089
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rochester Electronics | HUF75332P3 | 9713 | 23h | |||||||||
| Verical | HUF75332P3 | 787 | 286 | |||||||||
| DigiKey | HUF75332P3FS-ND | 354 | 1 | Tube | ||||||||
| Newark | HUF75332P3 | 0 | 800 | |||||||||
| Avnet | HUF75332P3 | 0 | 1600 | 1d |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi HUF75332P3.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.089
$ 0.68
Stock
236,703
30,002
Authorized Distributors
6
1
Mount
Through Hole
-
Case/Package
TO-220AB
-
Drain to Source Voltage (Vdss)
55 V
-
Continuous Drain Current (ID)
60 A
60 A
Threshold Voltage
-
-
Rds On Max
19 mΩ
-
Gate to Source Voltage (Vgs)
20 V
-
Power Dissipation
145 W
-
Input Capacitance
1.3 nF
-
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-06-01
Lifecycle StatusEOL (Last Updated: 5 days ago)
LTB Date2025-10-08
LTD Date2026-04-08
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 5 days ago)
Parti correlate
InfineonIRFZ48NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 14 Milliohms;ID 64A;TO-220AB;PD 130W;gFS 24S
InfineonIRFZ44NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 17.5 Milliohms;ID 49A;TO-220AB;PD 94W;-55deg
InfineonIRFZ46NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 16.5 Milliohms;ID 53A;TO-220AB;PD 107W;-55de
Descrizioni
Descrizioni di onsemi HUF75332P3 fornite dai suoi distributori.
N-Channel UltraFET Power MOSFET 55V, 60A, 19mΩ
52 A 55 V 0.019 ohm N-CHANNEL Si POWER MOSFET TO-220AB
55 V, 60 A, 0.019 OHM, N-CHANNEL ULTRAFET POWER MOSFET Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):0.016ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75332.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)60 A
Current Rating60 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance19 mΩ
Drain to Source Voltage (Vdss)55 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Operating Temperature175 °C
Max Power Dissipation145 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation145 W
Rds On Max19 mΩ
Rise Time90 ns
Turn-Off Delay Time50 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)55 V
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi HUF75332P3.
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità