onsemi HGTP3N60A4D

Trans IGBT Chip N-CH 600V 17A 3-Pin (3+Tab) TO-220AB Rail
$ 1.451
Obsolete
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DistributorSKUMinPkg
Verical
3
HGTP3N60A4D2360193
Rochester ElectronicsHGTP3N60A4D25.328
8h
AvnetHGTP3N60A4D0400
10h
Win SourceWS-HGTP3N60A4D3518
9h
Worldway ElectronicsHGTP3N60A4D23.1287
8h

Schede tecniche e documenti

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IHS

Datasheet0 pagine0 anni fa
Datasheet0 pagine0 anni fa

onsemi

Arrow Electronics

Fairchild Semiconductor

Farnell

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Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-01-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16

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Descrizioni

Descrizioni di onsemi HGTP3N60A4D fornite dai suoi distributori.

Trans IGBT Chip N-CH 600V 17A 3-Pin (3+Tab) TO-220AB Rail
Verical
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB
IHS
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:17A; Voltage, Vce Sat Max:2.7V; Power Dissipation:70W; Case Style:TO-220AB; Termination Type:Through Hole; Alternate Case Style:TO-263; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:40A; No. of Pins:3; Power, Pd:70W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:47ns; Time, Fall Typ:47ns; Time, Rise:11ns; Transistors, No. of:1
Farnell
The HGTP3N60A4D combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Fairchild Semiconductor

Immagini

Farnell
Rochester Electronics

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