onsemi HGTG5N120BND
$ 1.44
EOL
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | HGTG5N120BND | 412 | 210 | |||||||||
| Rochester Electronics | HGTG5N120BND | 412 | 1d | |||||||||
| Farnell | HGTG5N120BND | 0 | 300 | 17h | ||||||||
| Microchip USA | HGTG5N120BND | 119 | 150 | Tray | 9h | |||||||
| Component Stockers USA | HGTG5N120BND | 5447 | >1wk |
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Modelli CAD
Scarica il simbolo onsemi HGTG5N120BND, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 SnapEDA | Impronta | Scarica |
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusEOL (Last Updated: 4 days ago)
LTB Date2003-04-16
LTD Date2003-12-31
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 4 days ago)
Parti correlate
onsemiHGTG11N120CND
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247
Descrizioni
Descrizioni di onsemi HGTG5N120BND fornite dai suoi distributori.
167W 21A 1.2kV NPT (non-penetrating type) TO-247-3 IGBT Transistors / Modules ROHS
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
IGBT, 1200V, 21A; DC Collector Current: 21A; Collector Emitter Saturation Voltage Vce(on): 2.7V; Power Dissipation Pd: 167W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operati
HGTG5N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.45 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current21 A
Current Rating21 A
Element ConfigurationSingle
Fall Time200 ns
Max Breakdown Voltage600 V
Max Collector Current21 A
Max Operating Temperature150 °C
Max Power Dissipation167 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation167 W
Reverse Recovery Time65 ns
Rise Time20 ns
Schedule B8541290080
Voltage Rating (DC)1.2 kV
Dimensions
Height20.82 mm
Length15.87 mm
Width4.82 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità