Infineon IGW08T120FKSA1

Name: Infineon IGW08T120FKSA1
Brand: Infineon
SKU: IGW08T120FKSA1

Trans IGBT Chip N-CH 1.2KV 16A 3-Pin TO-247 Tube

$ 1.48

Obsolete

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Distributor		SKU		Min	Pkg
Rochester Electronics		IGW08T120FKSA1	14					1,650	1,480	1,390	8h
Farnell	2	IGW08T120	0	1		3,845*	3,845*	2,400*	1,936*	1,936*	8h
Microchip USA		IGW08T120FKSA1	211	50	Tube			30,030	30,030	30,030	1d
Win Source		WS-IGW08T120FKSA1	20	15				2,523	2,262	2,262	9h
Worldway Electronics		IGW08T120FKSA1	14.373	7	Tube		0,537	0,521	0,494	0,494	1d

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IHS

Datasheet12 pagine16 anni fa

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Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-01-29

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-08-15

LTD Date2025-02-15

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Descrizioni

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Trans IGBT Chip N-CH 1.2KV 16A 3-Pin TO-247 Tube

Avnet

IGBT,1200V,8A,TO247; Transistor Type:IGBT; DC Collector Current:8A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:70W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:70W

element14 APAC

The 1200 V, 8 A single TRENCHSTOP™ IGBT3 in a TO-247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

Infineon SCT

Configuration = Single / Continuous Collector Current (Ic) A = 16 / Collector-Emitter Voltage (Vceo) kV = 1.2 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 2.2 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 70 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260

Distrelec

Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

Infineon

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