onsemi HGTG20N60B3

Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2V @ 15V 20A 40A 165W 360ns
$ 2.64
Obsolete
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Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi HGTG20N60B3.

onsemi

Datasheet8 pagine6 anni fa
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Parti alternative

Questo componente
Parti alternative
Price @ 1000
$ 2.64
$ 1.33
Stock
206,213
27,882
Authorized Distributors
4
1
Mount
Through Hole
-
Case/Package
TO-247-3
TO-247
Collector Emitter Breakdown Voltage
600 V
-
Max Collector Current
40 A
40 A
Power Dissipation
165 W
-
Collector Emitter Saturation Voltage
1.8 V
-
Reverse Recovery Time
-
-

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-02
Lifecycle StatusObsolete (Last Updated: 4 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

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STGWA19NC60HD Series 600 V 52 A Very Fast IGBT with Ultrafast Diode - TO-247
IKW20N60H3 Series 600 V 40 A Third Generation High Speed Switching - TO-247-3
Trans IGBT Chip N=-CH 600V 40A 166000mW 3-Pin(3+Tab) TO-247 Tube
FGH20N60SFD Series 600 V 40 A Flange Mount Field Stop IGBT - TO-247

Descrizioni

Descrizioni di onsemi HGTG20N60B3 fornite dai suoi distributori.

Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2V @ 15V 20A 40A 165W 360ns
HGTG20N60B3 Series 600 V 40 A Flange Mount UFS N-Channel IGBT-TO-247
40A, 600V, UFS Series N-Channel IGBTs | IGBT 600V 40A 165W TO247
Trans IGBT Chip N-CH 600V 40A 165W 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
Igbt Single Transistor, 40 A, 2 V, 165 W, 600 V, To-247, 3 Rohs Compliant: Yes |Onsemi HGTG20N60B3..
PWR IGBT UFS 20A 600V TF<200NS N-CH TO-247
IGBT,N CH,600V,40A,TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 165W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
165W 1.8V 600V 40A TO-247-3 15.87mm*20.82mm*4.82mm
IGBT, 40A, 600V, N-CHANNEL, TO-2
The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
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  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • HGTG20N60B3..