onsemi HGTG20N60B3
$ 2.62
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-03-02
Lifecycle StatusObsolete (Last Updated: 2 days ago)
LTB Date2021-10-08
LTD Date2022-04-08
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 days ago)
Parti correlate
STMicroelectronicsSTGW20V60DF
Trench gate field-stop IGBT, V series 600 V, 20 A very high speed
STMicroelectronicsSTGW20H60DF
Trans IGBT Chip N-CH 600V 40A 167000mW 3-Pin(3+Tab) TO-247 Tube
STMicroelectronicsSTGWA19NC60HD
STGWA19NC60HD Series 600 V 52 A Very Fast IGBT with Ultrafast Diode - TO-247
InfineonIKW20N60H3FKSA1
IKW20N60H3 Series 600 V 40 A Third Generation High Speed Switching - TO-247-3
Descrizioni
Descrizioni di onsemi HGTG20N60B3 fornite dai suoi distributori.
HGTG20N60B3 Series 600 V 40 A Flange Mount UFS N-Channel IGBT-TO-247
40A, 600V, UFS Series N-Channel IGBTs | IGBT 600V 40A 165W TO247
Trans IGBT Chip N-CH 600V 40A 165W 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-247
Discrete MOSFET 165W 1.8V 600V 40A TO-247-3 TH 15.87mm × 20.82mm × 4.82mm
PWR IGBT UFS 20A 600V TF<200NS N-CH TO-247
IGBT UFS N-CHAN 600V 40A TO-247
IGBT,N CH,600V,40A,TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 165W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25°C and 150°C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: +0.00%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.8 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current40 A
Current Rating40 A
Element ConfigurationSingle
Fall Time175 ns
Max Collector Current40 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation165 W
Min Operating Temperature-40 °C
Number of Elements1
PolarityNPN
Power Dissipation165 W
Schedule B8541290080
Turn-Off Delay Time220 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)600 V
Dimensions
Height24.75 mm
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Dichiarazioni di conformità