Infineon IKW20N60TFKSA1

Trans IGBT Chip N=-CH 600V 40A 166000mW 3-Pin(3+Tab) TO-247 Tube
$ 1.581
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NewarkIKW20N60TFKSA18461
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IKW20N60TFKSA11241
DigiKeyIKW20N60TFKSA1-ND7731Tube
AvnetIKW20N60TFKSA10240
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Future ElectronicsIKW20N60TFKSA10240Tube

Schede tecniche e documenti

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IHS

Datasheet13 pagine10 anni fa

Upverter

element14 APAC

Farnell

iiiC

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Supply Chain

Country of OriginGermany, Mainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-12-20
Lifecycle StatusProduction (Last Updated: 2 weeks ago)

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Descrizioni

Descrizioni di Infineon IKW20N60TFKSA1 fornite dai suoi distributori.

Trans IGBT Chip N=-CH 600V 40A 166000mW 3-Pin(3+Tab) TO-247 Tube
Verical
166W 40A 600V FS(Field Stop) TO-247-3-1 IGBT Transistors / Modules ROHS
EBEE
600 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
Infineon SCT
IGBT, N, 600V, 20A, TO-247; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.05V; Power Dissipation Pd: 166W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; Operating Temper
Farnell
IGBT, N, 600V, 20A, TO-247; Transistor Type:IGBT; Voltage, Vces:600V; Current, Ic Continuous a Max:20A; Voltage, Vce Sat Max:2.05V; Power Dissipation:166W; Case Style:TO-247; Termination Type:Through Hole; Transistor Polarity:N; RoHS Compliant: Yes
Newark
Hard-switching 600 V, 20 A TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
Infineon
Configuration = Single / Continuous Collector Current (Ic) A = 20 / Collector-Emitter Voltage (Vceo) V = 600 / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.5 / Emitter Leakage Current nA = 100 / Power Dissipation (Pd) W = 166 / Gate Emitter Voltage (Vge) V = 20 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260
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Immagini

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Alias del produttore

Infineon ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. Infineon può anche essere conosciuto con i seguenti nomi:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • IKW20N60T
  • IKW20N60T.
  • SP000054886