onsemi HGTG18N120BND
Obsolete
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Modelli CAD
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 3 days ago)
LTB Date2022-01-07
LTD Date2022-07-07
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)
Parti correlate
onsemiHGTG11N120CND
Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247
onsemiNGTB25N120SWG
Igbt Single Transistor, 50 A, 2 V, 385 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes
InfineonIHW20N120R5XKSA1
Compliant Through Hole Lead Free TO-247 Halogen Free Production (Last Updated: 2 years ago) 240
Descrizioni
Descrizioni di onsemi HGTG18N120BND fornite dai suoi distributori.
Trans IGBT Chip N-CH 1200V 54A 390000mW 3-Pin(3+Tab) TO-247 Rail
HGTG18N120BND Series 1200 V 54 A Flange Mount NPT N-Channel IGBT-TO-247
IGBT, N, TO-247; Transistor Type:IGBT; DC Collector Current:54A; Collector Emitter Voltage Vces:2.7V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-249; Current Ic @ Vce Sat:18A; Current Ic Continuous a Max:54A; Device Marking:HGTG18N120BND; Fall Time Max:140ns; Fall Time Typ:90ns; Package / Case:TO-247; Power Dissipation Max:390W; Power Dissipation Pd:390W; Power Dissipation Pd:390W; Pulsed Current Icm:160A; Rise Time:22ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
HGTG18N120BND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Specifiche tecniche
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.39 g
Technical
Collector Emitter Breakdown Voltage1.2 kV
Collector Emitter Saturation Voltage2.45 V
Collector Emitter Voltage (VCEO)1.2 kV
Continuous Collector Current54 A
Current Rating54 A
Element ConfigurationSingle
Fall Time200 ns
Max Collector Current54 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation390 W
Min Operating Temperature-55 °C
Number of Elements1
PolarityNPN
Power Dissipation390 W
Reverse Recovery Time75 ns
Rise Time22 ns
Schedule B8541290080
Turn-Off Delay Time170 ns
Turn-On Delay Time23 ns
Voltage Rating (DC)1.2 kV
Dimensions
Height24.75 mm
Length15.87 mm
Width4.82 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità