Infineon IHW20N120R3FKSA1

Trans IGBT Chip N-CH 1200V 40A 310000mW 3-Pin(3+Tab) TO-247 Tube

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-247

40 A 1200 V N-CHANNEL IGBT TO-247

IGBT+ DIODE,1200V,20A,TO247; Transistor Type:IGBT; DC Collector Current:20A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:310W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:310W

The 3 rd generation of reverse conducting IGBTs has been optimized for lower switching and conduction losses. Reduced power dissipation together with soft switching behavior allows better thermal performance and EMI behavior resulting in lower system costs. Excellent performance can be achieved at lower costs. | Summary of Features: Best-in-class conduction properties in VCEsat and Vf; Lowest switching losses, highest efficiency; Tj(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Lowest power dissipation; Better thermal management; Surge current capability; Lower EMI filtering requirements; Reduced system costs; Excellent quality; Highest reliability against peak currents