onsemi FQT7N10LTF
$ 0.753
EOL
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | FQT7N10LTF | 1.012.000 | 4K | Tape & Reel | ||||||||
| Avnet | FQT7N10LTF | 72.000 | 878 | 15h | ||||||||
| Newark | FQT7N10LTF | 1691 | 1 | Cut Tape | ||||||||
| Verical | FQT7N10LTF | 4000 | 4K | |||||||||
| Arrow Electronics | FQT7N10LTF | 4000 | 4K |
Cronologia dell'inventario
Tendenza a 3 mesi: -15.61%
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Supply Chain
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2001-06-04
Lifecycle StatusEOL (Last Updated: 20 hours ago)
LTB Date2025-09-12
LTD Date2026-03-12
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 20 hours ago)
Parti correlate
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Power MOSFET, N Channel, 100 V, 1.8 A, 230 Milliohms, SOT-223, 4 Pins, Surface Mount
InfineonIRFL4310TRPBF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.2Ohm;ID 1.6A;SOT-223;PD 1W;VGS +/-20V;-55
Descrizioni
Descrizioni di onsemi FQT7N10LTF fornite dai suoi distributori.
Power MOSFET, N-Channel, Logic Level, QFET®, 100 V, 1.7 A, 350 mΩ, SOT-223
Trans MOSFET N-CH 100V 1.7A 4-Pin(3+Tab) SOT-223 T/R / MOSFET N-CH 100V 1.7A SOT-223
N-Channel 100 V 0.35 Ohm Surface Mount Mosfet - SOT-223
100V LOGIC N-CHANNEL MOSFET Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 100V, 1.7A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:1.7A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.275ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; No. of Pins:4; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1.7 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 380 / Gate-Source Voltage V = 20 / Fall Time ns = 110 / Rise Time ns = 210 / Turn-OFF Delay Time ns = 45 / Turn-ON Delay Time ns = 30 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 2
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -15.61%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
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Specifiche tecniche
Physical
Case/PackageSOT-223-4
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals4
Weight188 mg
Technical
Continuous Drain Current (ID)1.7 A
Current Rating1.7 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time50 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance290 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation2 W
Rds On Max350 mΩ
Resistance350 mΩ
Rise Time100 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time17 ns
Turn-On Delay Time9 ns
Voltage Rating (DC)100 V
Dimensions
Height1.8 mm
Length6.5 mm
Width3.56 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità