onsemi FQT1N60CTF-WS
$ 0.33
EOL
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | FQT1N60CTF-WS | 0 | 1 | Cut Tape | ||||||||
| Avnet | FQT1N60CTF-WS | 0 | 4K | 6h | ||||||||
| element14 APAC | FQT1N60CTF-WS | 0 | 1 | Cut Tape | 17h | |||||||
| Farnell | FQT1N60CTF-WS | 0 | 1 | Cut Tape | 1d | |||||||
| Component Stockers USA | FQT1N60CTF-WS | 5590 | 18h |
Cronologia dell'inventario
Tendenza a 3 mesi: -50.45%
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Supply Chain
Country of OriginSouth Korea
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-10-20
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
Parti correlate
InfineonBSP125 L6327
MOSFET, N-CH, 600V, 120MA, SOT-223; Transistor Polarity:N Channel; Continuous Dr
Descrizioni
Descrizioni di onsemi FQT1N60CTF-WS fornite dai suoi distributori.
Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223
Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R
MOSFET, N-CH, 600V, 0.2A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 9.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -50.45%
Modelli CAD
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Specifiche tecniche
Physical
Case/PackageSOT-223-4
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals4
Weight188 mg
Technical
Continuous Drain Current (ID)200 mA
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance11.5 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time27 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance170 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.1 W
Rds On Max11.5 Ω
Resistance11.5 Ω
Rise Time21 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time13 ns
Turn-On Delay Time7 ns
Dimensions
Height1.91 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità