onsemi FQPF8N80C
Production
Prezzo e stock
Distributori autorizzati
Distributori di stock non autorizzati
Rivenditori non autorizzati
Cronologia dell'inventario
Tendenza a 3 mesi: -1.41%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Modelli CAD
Scarica il simbolo onsemi FQPF8N80C, l'impronta e i modelli STEP 3D dai nostri partner di fiducia.
| FONTE | eCAD | mCAD | FILE |
|---|---|---|---|
 Component Search Engine | SimboloImpronta | 3D | Scarica |
Il sito del partner si aprirà in una nuova scheda quando si scaricano i modelli CAD
Scaricando i modelli CAD da Octopart, accetti i nostri Termini e condizioni e l'Informativa sulla privacy.
Parti alternative
Questo componente
Parti alternative
Price @ 1000
$ 1.363
Stock
273,860
270,659
Authorized Distributors
5
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
8 A
8 A
Threshold Voltage
5 V
-
Rds On Max
1.55 Ω
1.55 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
59 W
59 W
Input Capacitance
2.05 nF
2.05 nF
Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-04-03
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusLIFETIME (Last Updated: 3 years ago)
Parti correlate
onsemiFDPF8N60ZUT
N-Channel Power MOSFET, UniFETTM, Ultra FRFETTM, 600 V, 6.5 A, 1.35 Ω, TO-220F
STMicroelectronicsSTP8NK80ZFP
N-channel 800 V, 1.3 Ohm, 6.2 A, TO-220FP Zener-protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTP10NK80ZFP
N-Channel 800V - 0.8 Ohm - 9A - TO-220FP Zener-Protected SuperMESH(TM) POWER MOSFET
Descrizioni
Descrizioni di onsemi FQPF8N80C fornite dai suoi distributori.
Power MOSFET, N-Channel, QFET®, 800 V, 8 A, 1.55 Ω, TO-220F
Power MOSFET, N Channel, 800 V, 8 A, 1.29 ohm, TO-220F, Through Hole
Power Field-Effect Transistor, 8A I(D), 800V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.55ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:59W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:59W; Power Dissipation Pd:59W; Pulse Current Idm:32A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: -1.41%
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
1 parte disponibile
Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)8 A
Current Rating8 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.55 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.05 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation59 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation59 W
Rds On Max1.55 Ω
Resistance1.55 Ω
Rise Time110 ns
Schedule B8541290080
Threshold Voltage5 V
Turn-Off Delay Time65 ns
Turn-On Delay Time40 ns
Voltage Rating (DC)800 V
Dimensions
Height19.3 mm
Length10.16 mm
Width4.7 mm
Conformità
Classificazione ambientale
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità