onsemi FQPF8N60CYDTU
$ 1.148
Obsolete
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Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQPF8N60CYDTU.
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Descrizioni
Descrizioni di onsemi FQPF8N60CYDTU fornite dai suoi distributori.
MOSFET N-CH 600V 7.5A TO-220F / Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220F Rail
N-Channel QFET® MOSFET 600V, 7.5A, 1.2Ω
Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Alias del produttore
onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
Cronologia dell'inventario
Tendenza a 3 mesi: Restocked
Modelli CAD
Scarica il simbolo, l'impronta e il 3D STEP
Parti alternative
0 parti disponibili
Specifiche tecniche
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.565 g
Technical
Continuous Drain Current (ID)7.5 A
Current Rating7.5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.2 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time64.5 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.255 nF
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation48 W
Rds On Max1.2 Ω
Rise Time60.5 ns
Turn-Off Delay Time81 ns
Turn-On Delay Time16.5 ns
Voltage Rating (DC)600 V
Schede tecniche e documenti
Scarica le schede tecniche e la documentazione del produttore per onsemi FQPF8N60CYDTU.
Conformità
Classificazione ambientale
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Dichiarazioni di conformità