onsemi FQPF65N06

Name: onsemi FQPF65N06
Brand: onsemi
SKU: FQPF65N06

Power MOSFET, N-Channel, QFET®, 60 V, 40 A, 16 mΩ, TO-220F

Obsolete

Pagina del produttore Scheda dati

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Distributor	SKU		Min	Pkg
Farnell	FQPF65N06	0	1		2,383*	2,113*	1,885*	1,427*	1,427*	11h
element14 APAC	FQPF65N06	0	1		2,651*	2,096*	1,775*	1,298*	1,236*	1h
Win Source	WS-FQPF65N06	300.000	100				0,586	0,390	0,390	13h
Worldway Electronics	FQPF65N06	16.921	7	Tube		0,356	0,345	0,327	0,327	1d
Aztech	FQPF65N06	867			6,880	6,880	6,880	6,880	6,880	2d

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Schede tecniche e documenti

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IHS

Datasheet8 pagine12 anni fa

Datasheet0 pagine0 anni fa

Factory Futures

onsemi

Farnell

Newark

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2000-07-07

Lifecycle StatusObsolete (Last Updated: 6 days ago)

LTB Date2022-06-23

LTD Date2022-12-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

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STMicroelectronicsSTP55NF06FP

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STMicroelectronicsSTP60NF06FP

Transistor MOSFET N-CH 60V 30A 3-Pin (3+Tab) TO-220FP

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InfineonIRFIZ48NPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.016Ohm;ID 36A;TO-220 Full-Pak;PD 42W;-55de

Dettagli

Descrizioni

Descrizioni di onsemi FQPF65N06 fornite dai suoi distributori.

Power MOSFET, N-Channel, QFET®, 60 V, 40 A, 16 mΩ, TO-220F

onsemi

Trans MOSFET N-CH 60V 40A 3-Pin(3+Tab) TO-220FP Tube

Verical

Power Field-Effect Transistor, 40A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

POWER FIELD-EFFECT TRANSISTOR, 4

ODG (Origin Data Global)

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:60V; On Resistance Rds(on):16mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:56W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:40A; Package / Case:TO-220F; Power Dissipation Pd:56W; Power Dissipation Pd:56W; Pulse Current Idm:160A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:25V; Voltage Vgs Rds on Measurement:10V

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Fairchild Semiconductor

Immagini

Rochester Electronics

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

ON Semiconductor
ONS
ONSEMICON
ON SEM
ON SEMICONDUCTO
ON SEMICONDUCTORS
ONSEMIC
ON Semicondu
OSC
ONSE
ON SEMICOND
ON Semiconductor / Fairchild
SCG
ON Semiconductor Cor
ON SEMICO
ONSM
ON SEMICONDUCTOR CORP
onsemi / Fairchild
MOT/ON SEMI
Fairchild/ONSemiconductor
ON Semiconductor Corporation
ON4
ON Semi - ON Semiconductor
ON SEMICONDUCT
ON-SEMI SCG
ON Semiconductor Inc.
onsemiconductor
On Semiconductor Ltd

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Specifiche tecniche

Physical

Case/PackageTO-220-3

MountThrough Hole

Number of Pins3

Number of Terminals3

Weight2.27 g

Technical

Continuous Drain Current (ID)40 A

Current Rating40 A

Drain to Source Breakdown Voltage60 V

Drain to Source Resistance16 mΩ

Drain to Source Voltage (Vdss)60 V

Dual Supply Voltage60 V

Element ConfigurationSingle

Fall Time105 ns

Gate to Source Voltage (Vgs)25 V

Input Capacitance2.41 nF

Max Operating Temperature175 °C

Max Power Dissipation56 W

Min Breakdown Voltage60 V

Min Operating Temperature-55 °C

Nominal Vgs4 V

Number of Elements1

PackagingTape & Reel (TR)

Power Dissipation56 W

Rds On Max16 mΩ

Rise Time160 ns

Threshold Voltage4 V

Turn-Off Delay Time90 ns

Turn-On Delay Time20 ns

Voltage Rating (DC)60 V

Dimensions

Height9.19 mm

Length10.16 mm

Width4.7 mm

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FQPF65N06.

IHS

Datasheet8 pagine12 anni fa

Datasheet0 pagine0 anni fa

Factory Futures

onsemi

Farnell

Newark

Conformità

Classificazione ambientale

China RoHSNon-Compliant

Lead FreeLead Free

Radiation HardeningNo

REACH SVHCNo

RoHSCompliant

Dichiarazioni di conformità

Rohs Statement3 pagine5 anni fa

Reach Statement3 pagine12 anni fa

Materials Sheet3 pagine12 anni fa

Reach Statement3 pagine11 anni fa

Materials Sheet3 pagine11 anni fa

Reach Statement8 pagine11 anni fa

Rohs Statement1 pagina13 anni fa

Rohs Statement1 pagina14 anni fa

Reach Statement2 pagine13 anni fa

Rohs StatementN/AN/A