onsemi FQPF3N80C

Power Mosfet, N-channel, Qfet®, 800 V, 3.0 A, 4.8 Ω, TO-220F
$ 0.868
Production
Pagina del produttoreScheda dati

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Verical
8
FQPF3N80C500289
Rochester Electronics
2
FQPF3N80C191.597
8h
DigiKeyFQPF3N80C-ND10901Tube
NewarkFQPF3N80C0250
Onlinecomponents.comFQPF3N80C050Bulk

Schede tecniche e documenti

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Technical Drawing1 pagina5 anni fa

IHS

Fairchild Semiconductor

onsemi

Farnell

Cronologia dell'inventario

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Parti alternative

Questo componente
Parti alternative
onsemiFQPF3N80C
onsemiFQPF3N80CYDTU
Price @ 1000
$ 0.868
$ 0.777
Stock
790,079
36,645
Authorized Distributors
6
2
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
800 V
800 V
Continuous Drain Current (ID)
3 A
3 A
Threshold Voltage
5 V
-
Rds On Max
4.8 Ω
4.8 Ω
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
39 W
39 W
Input Capacitance
705 pF
705 pF

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2003-05-21
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descrizioni

Descrizioni di onsemi FQPF3N80C fornite dai suoi distributori.

Power MOSFET, N-Channel, QFET®, 800 V, 3.0 A, 4.8 Ω, TO-220F
onsemi
In a Pack of 5, N-Channel MOSFET, 3 A, 800 V, 3-Pin TO-220F ON Semiconductor FQPF3N80C
Fly-Wing Technology
800V 3A 39W 4.8´Î@10V1.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS
Dasenic
Power Field-Effect Transistor, 3A I(D), 800V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:800V; On Resistance Rds(on):4.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:39W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:3A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:39W; Power Dissipation Pd:39W; Pulse Current Idm:12A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V
element14 APAC
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Fairchild Semiconductor

Immagini

RS
TME
Farnell
South Microelectronics
iiiC
iiiC
LZChips
Rochester Electronics
Newark

Alias del produttore

onsemi ha diversi marchi in tutto il mondo che i distributori possono utilizzare come nomi alternativi. onsemi può anche essere conosciuto con i seguenti nomi:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FQPF-3N80C
  • FQPF3N80C.