onsemi FQPF2N60C

Power MOSFET, N-Channel, QFET®, 600 V, 2 A, 4.7 Ω, TO-220F

N-Channel 600 V 4.7 Ohm Flange Mount Mosfet - TO-220F

600V 2A 4.7´Î@10V1A 23W 4V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

23W(Tc) 30V 4V@ 250µA 12nC@ 10 V 1individualNChannel 600V 4.7Ω@ 1A,10V 2A 235pF@25V TO-220F-3 Through hole mounting 10.36mm*4.9mm*16.07mm

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:600V; On Resistance Rds(on):4.7ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:23W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2A; No. of Transistors:1; Package / Case:TO-220F; Power Dissipation Pd:23W; Power Dissipation Pd:23W; Pulse Current Idm:8A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.