onsemi FQP6N80

Trans MOSFET N-CH 800V 5.8A 3-Pin(3+Tab) TO-220AB Rail
Obsolete
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DistributorSKUMinPkg
Farnell
2
FQP6N80.01
1d
element14 APACFQP6N8001
19h
Microchip USAFQP6N803733KTray
22h
Win SourceWS-FQP6N8012.10095
6h
Worldway ElectronicsFQP6N8018.5637Tube
5h

Schede tecniche e documenti

Scarica le schede tecniche e la documentazione del produttore per onsemi FQP6N80.

IHS

Datasheet8 pagine25 anni fa
Datasheet0 pagine0 anni fa

element14 APAC

Fairchild Semiconductor

Farnell

iiiC

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-11-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-12-13
LTD Date2012-06-13

Parti correlate

STMicroelectronicsSTP7NK80Z
N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH Power MOSFET in a TO-220 package
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STMicroelectronicsSTP9NK70Z
N-Channel 700V - 1Ohm - 7.5A - TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET
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STMicroelectronicsSTP6NK90Z
N-channel 900 V, 1.56 Ohm, 5.8 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET
Dettagli

Descrizioni

Descrizioni di onsemi FQP6N80 fornite dai suoi distributori.

Trans MOSFET N-CH 800V 5.8A 3-Pin(3+Tab) TO-220AB Rail
Verical
Power Field-Effect Transistor, 5.8A I(D), 800V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IHS
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.95ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:158W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:5.8A; On State Resistance Max:1.95ohm; Package / Case:TO-220; Power Dissipation Pd:158W; Power Dissipation Pd:158W; Pulse Current Idm:23.2A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
element14 APAC
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:800V; Current, Id Cont:5.8A; Resistance, Rds On:1.95ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:5V; Case Style:TO-220; Termination ;RoHS Compliant: Yes
Newark
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
Fairchild Semiconductor

Immagini

Farnell
iiiC
Rochester Electronics

Alias del produttore

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  • ON Semiconductor
  • ONS
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  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • ON SEMICONDUCTOR CORP
  • onsemi / Fairchild
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON Semiconductor Corporation
  • ON4
  • ON Semi - ON Semiconductor
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON Semiconductor Inc.
  • onsemiconductor
  • On Semiconductor Ltd

Alias del numero di parte

Questa parte può essere conosciuta con i seguenti numeri di parte alternativi:

  • FQP6N80.